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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 55A 8DFN
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Asymmetrical
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：55A (Tc), 85A (Tc)
- Rds On (Max) @ Id, Vgs：5mOhm @ 20A, 10V, 2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA, 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15nC @ 4.5V, 25nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：1150pF @ 15V, 2270pF @ 15V
- Power - Max：24W, 39W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-VDFN Exposed Pad
- Supplier Device Package：8-DFN (5x6)
- Grade：-
- Qualification：-
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Overview
The AOE6936 is a dual asymmetric N-channel MOSFET from Alpha & Omega Semiconductor, housed in an 8-lead DFN 5x6E package. It features Bottom Source Technology for enhanced thermal performance. The device integrates two distinct channels: Q1 with a maximum drain current of 55A and RDS(ON) under 5mΩ at VGS=10V; Q2 supports up to 85A with RDS(ON) below 2mΩ at the same gate voltage. Both channels operate with a 30V drain-source breakdown voltage and are rated for junction temperatures up to 150°C.
Feature Summary
- Bottom Source Technology architecture
- Dual asymmetric channel configuration
- High current capability design
Applications
- DC/DC Converters in Computing, Servers, and POL
- Non-Isolated DC/DC Converters in Telecom and Industrial
Procurement Notes
Verify component authenticity by cross-referencing the manufacturer's official datasheet revision history and ordering codes. Confirm that the specific batch matches the required RoHS and Halogen-Free compliance standards documented by Alpha & Omega Semiconductor Inc. prior to finalizing acquisition.
Selection Notes
Select this component when designing circuits requiring asymmetric current handling within a single footprint. The integrated bottom source structure provides superior thermal dissipation compared to standard top-source designs. Ensure the PCB layout accommodates the exposed pad for optimal heat transfer to meet the specified power dissipation limits.
Part Context
This part belongs to the AlphaMOS series of power transistors manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to achieve low on-resistance and fast switching speeds. The product line is designed specifically for high-efficiency power management applications in compact form factors.
Replacement Considerations
Direct substitutes include other 30V dual asymmetric N-channel MOSFETs in 8-DFN packages. Verify pinout compatibility and ensure equivalent RDS(ON) and thermal resistance values match the original design requirements before implementation.
