AOH3254

$0.48

Description：MOSFET N-CH 150V 5A SOT223-4
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)

SKU:61d03f2ac498 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 150V 5A SOT223-4
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：150 V
Current - Continuous Drain (Id) @ 25°C：5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：63mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：675 pF @ 75 V
FET Feature：-
Power Dissipation (Max)：4.1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-223-4
Package / Case：TO-261-4, TO-261AA

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AOH3254

Overview

The AOH3254 is a 150V N-Channel MOSFET utilizing trench power MV technology. It features low on-resistance and gate charge, optimized for fast-switching applications. The device offers a continuous drain current of 5A at VGS=10V, with RDS(ON) below 63mΩ at VGS=10V and below 77mΩ at VGS=4.5V. It is housed in a SOT223 package.

Feature Summary

Incorporates 100% UIS testing for enhanced reliability
Features 100% Rg testing to ensure consistent switching performance
Designed with low gate charge for efficient operation

Applications

Synchronous rectification in DC/DC converters
Synchronous rectification in AC/DC converters
Industrial drive systems
Motor drive applications

Procurement Notes

Verify the specific ordering suffix and package type against the manufacturer's official documentation before procurement. Confirm that the component meets the required thermal and electrical specifications for the intended application environment. Ensure compliance with RoHS standards as indicated in the datasheet.

Selection Notes

Select this component for applications requiring robust avalanche energy handling and fast switching capabilities. Consider the thermal resistance characteristics and package limitations when designing the heat dissipation strategy. Evaluate the gate charge requirements against the driving circuit capabilities to optimize switching efficiency.

Part Context

This part belongs to Alpha & Omega Semiconductor's lineup of N-Channel MOSFETs designed for power management applications. It utilizes trench power MV technology to achieve low on-resistance and improved switching performance compared to standard planar technologies.