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Product Detailed Parameters
- Description：MOSFET N-CH 60V 6.5A/30A TO251A
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：6.5A (Ta), 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：24mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：34 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1900 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 52W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-251A
- Package / Case：TO-251-3 Stub Leads, IPAK
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Overview
The AOI4130 is a 60V N-Channel MOSFET utilizing advanced trench technology to achieve extremely low on-resistance. It features a maximum drain-source voltage of 60V and a continuous drain current of 30A at VGS=10V. The device exhibits an on-resistance of less than 24mΩ at VGS=10V and less than 30mΩ at VGS=4.5V. It is rated for a junction temperature range of -55°C to 175°C and includes 100% UIS testing.
Feature Summary
- Combines advanced trench MOSFET technology with a low resistance package
- Provides extremely low RDS(ON) for high efficiency
- Features 100% Unclamped Inductive Switching (UIS) testing
Applications
- Boost converters
- Synchronous rectifiers
- Consumer power supplies
- Telecom power supplies
- Industrial power supplies
- LED backlighting
Procurement Notes
Verify the specific package variant, as the datasheet covers AOD4130/AOI4130 in TO-251A, IPAK, TO-252, and DPAK configurations. Confirm thermal performance requirements against the specified junction-to-ambient and junction-to-case resistances. Ensure compatibility with the operating temperature range of -55°C to 175°C for the intended environment.
Selection Notes
Select this component for applications requiring low conduction losses and robust switching performance. The low gate charge characteristics support efficient drive requirements. Consider the thermal management capabilities relative to the specific PCB layout and ambient conditions, as power dissipation limits vary significantly between junction-to-case and junction-to-ambient scenarios.
Part Context
The AOI4130 belongs to the AOD4130/AOI4130 family of 60V N-Channel MOSFETs manufactured by Alpha & Omega Semiconductor. These devices are designed using SDMOS trench technology to balance low on-resistance with controlled switching behavior, making them suitable for general-purpose load switching and PWM applications.
Replacement Considerations
Direct substitutes include the AOD4130, which shares identical electrical specifications and functional characteristics within the same product family.
