Mosfets AOI4N60 product image

AOI4N60

$0.30
  • Description:MOSFET N-CH 600V 4A TO251A
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube

SKU:063f7fdbb8ee Category: Brand:

  
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AOI4N60 is listed in the Mosfets range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 600V 4A TO251A. Review the specifications below when checking this part for your BOM.

Mosfets specifications for AOI4N60

  • Description:MOSFET N-CH 600V 4A TO251A
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):600 V
  • Current - Continuous Drain (Id) @ 25°C:4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:2.3Ohm @ 2A, 10V
  • Vgs(th) (Max) @ Id:4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:14.5 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:640 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):104W (Tc)
  • Operating Temperature:-50°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-251A
  • Package / Case:TO-251-3 Stub Leads, IPAK

Mosfets datasheet and documents for AOI4N60

AOI4N60

Mosfets Overview

The AOI4N60 is a single N-channel MOSFET from Alpha & Omega Semiconductor Inc., designed for surface-mount applications in the TO-251A package. It features a drain-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 4 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 3.5 ohms at 10 V gate drive and 2 A drain current. Key electrical parameters include a gate threshold voltage (Vgs(th)) of 4.5 V max at 250 µA, a maximum gate charge (Qg) of 12 nC at 10 V, and an input capacitance (Ciss) of 370 pF at 25 V. Power dissipation is rated at 104 W at case temperature, with an operating junction temperature range of -55°C to 150°C.

Mosfets Feature Summary

  • High-voltage capability with 600 V drain-source breakdown voltage suitable for robust power switching applications.
  • Low gate charge characteristics enabling efficient driving and reduced switching losses in high-frequency circuits.
  • Robust thermal performance with 104 W power dissipation rating under case temperature conditions.

Mosfets Applications

  • DC-DC converter circuits requiring high-voltage isolation and efficient power management.
  • Motor control systems utilizing N-channel MOSFETs for low-side switching.
  • General-purpose power switching applications in industrial equipment.

Mosfets Procurement Notes

Verify the specific package variant, as AOI4N60 typically denotes the TO-251A surface-mount version. Confirm RoHS compliance status with the manufacturer or authorized distributor prior to ordering. Ensure that the procurement channel provides original components with traceable documentation to guarantee authenticity and performance reliability for critical power electronics designs.

Mosfets Selection Notes

Select the AOI4N60 when a 600 V N-channel MOSFET is required in a compact TO-251A footprint. Compare its 3.5 ohm Rds(on) against alternative devices if lower conduction losses are critical. Consider the 4 A current rating relative to the expected load and thermal management capabilities of the PCB design to ensure operation within the specified junction temperature limits.

Mosfets Part Context

This component belongs to the discrete semiconductor product category, specifically within the family of single FETs and MOSFETs manufactured by Alpha & Omega Semiconductor Inc. It is part of their portfolio of vertical DMOS transistors designed for various power management and switching applications across consumer, industrial, and automotive sectors.

Mosfets Replacement Considerations

Direct substitutes may include other 600 V N-channel MOSFETs in TO-251A packages with comparable current and resistance ratings, such as the AOI4N60L or similar variants from other manufacturers, provided pinouts and electrical specifications align with the original design requirements.

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