AOI4S60

Single FETs, MOSFETs Overview

The AOI4S60 is a 600V N-channel power MOSFET from Alpha & Omega Semiconductor, utilizing advanced aMOSTM high voltage process technology. It features a maximum drain-source voltage of 600V and a continuous drain current of 1.6A at 25°C case temperature. The device offers a typical gate charge of 6nC and a maximum on-resistance of 0.9Ω. It includes guaranteed avalanche capability with single pulsed avalanche energy of 20mJ and repetitive avalanche energy of 0.45mJ. Thermal resistance from junction to case is 2.2°C/W, while junction-to-ambient is 55°C/W.

Single FETs, MOSFETs Feature Summary

• Utilizes advanced aMOSTM high voltage process for robust switching performance
• Features low gate charge and output capacitance energy for efficient operation
• Includes 100% tested avalanche capability for enhanced reliability
• Guaranteed body-diode reverse recovery characteristics

Single FETs, MOSFETs Applications

• Offline power supply designs
• General purpose switching applications
• Power management circuits requiring high voltage isolation

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant required, as the datasheet covers AOD4S60, AOI4S60, and AOU4S60 which share electrical specifications but may differ in physical packaging such as TO-252 or TO-251. Confirm RoHS compliance status and check for any recent product change notices or obsolescence announcements directly from the manufacturer before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring 600V blocking capability with moderate current handling up to 1.6A. Consider the thermal resistance values when designing heatsinking solutions. Ensure the operating junction temperature remains within the -55°C to 150°C range. Verify that the gate drive voltage aligns with the specified threshold and on-resistance conditions for optimal efficiency.

Single FETs, MOSFETs Part Context

This part belongs to the AOx4S60 family of power transistors designed by Alpha & Omega Semiconductor. These devices are engineered to provide a balance of low on-resistance and fast switching speeds. The family utilizes proprietary aMOSTM technology to achieve high performance in compact packages suitable for various power electronics applications.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include other 600V N-channel MOSFETs with similar current ratings and package types. Verify pinout compatibility and ensure equivalent or superior electrical parameters for VDS, ID, RDS(on), and thermal resistance. Cross-reference with manufacturer replacement guides for confirmed compatible parts.