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AOI7S65 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 650V 7A TO251A. Review the specifications below when checking this part for your BOM.
The AOI7S65 is a through-hole N-channel power MOSFET from Alpha & Omega Semiconductor, utilizing the αMOS™ high-voltage process. It features a drain-source voltage of 650V and a continuous drain current of 7A at case temperature. The device has a maximum on-resistance of 0.65Ω at VGS=10V and a typical gate charge of 9.2nC. It supports a peak pulsed drain current of 30A and includes 100% UIS testing for avalanche ruggedness.
Verify the specific package type during procurement, as the AOI7S65 designation corresponds to the TO-251A (IPAK) through-hole variant within the AOD/AOU/AOI family. Confirm RoHS compliance status and ensure the component meets consumer market qualification standards, as critical life support applications are explicitly excluded by the manufacturer.
Select this component when a through-hole mounting solution is required for high-voltage switching circuits. The AOI7S65 offers a balance of low conduction losses and fast switching speeds suitable for general-purpose offline converters. Ensure thermal management aligns with the specified junction-to-case resistance for reliable operation under load.
This part belongs to the AOD7S65/AOU7S65/AOI7S65 series manufactured by Alpha & Omega Semiconductor. The series shares identical electrical characteristics but differs in physical packaging to accommodate surface-mount or through-hole assembly requirements. The AOI7S65 specifically utilizes the TO-251A IPAK package.
Direct substitutes include other 650V N-channel MOSFETs in TO-251A packages with comparable RDS(on) and Qg specifications. Verify pinout compatibility and thermal resistance ratings before substitution.
Yes, the datasheet confirms that 100% of units undergo Unclamped Inductive Switching (UIS) testing to guarantee avalanche ruggedness.
The absolute maximum rating for Gate-Source Voltage (VGS) is ±30V.
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