AOK033V120X2

$15.16

Description：1200V SILICON CARBIDE MOSFET
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube

SKU:b9d88e81cd2f Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

AOK033V120X2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is 1200V SILICON CARBIDE MOSFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOK033V120X2

Description：1200V SILICON CARBIDE MOSFET
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：68A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：43mOhm @ 20A, 15V
Vgs(th) (Max) @ Id：2.8V @ 17.5mA
Gate Charge (Qg) (Max) @ Vgs：104 nC @ 15 V
Vgs (Max)：+15V, -5V
Input Capacitance (Ciss) (Max) @ Vds：2908 pF @ 800 V
FET Feature：-
Power Dissipation (Max)：300W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for AOK033V120X2

AOK033V120X2

Single FETs, MOSFETs Overview

The AOK033V120X2 is a 1200 V αSiC Power MOSFET in a TO-247-3L package. It features a typical RDS(ON) of 33 mΩ at VGS = 15 V and ID = 20 A, with a maximum of 43 mΩ at 25°C. The device supports a continuous drain current of 68 A at TC = 25°C and a pulsed current of 120 A. Key dynamic parameters include a total gate charge (Qg) of 104 nC, input capacitance (Ciss) of 2908 pF, and body diode reverse recovery charge (Qrr) of 227 nC. It offers 100% UIS testing capability and operates within a junction temperature range of -55°C to 175°C.

Single FETs, MOSFETs Feature Summary

Utilizes proprietary αSiC technology for low conduction loss and fast switching performance.
Optimized for a recommended operating gate drive voltage of +15 V.
Features low reverse recovery charge (Qrr) and low output capacitance stored energy (EOSS).
Includes 100% Unclamped Inductive Switching (UIS) test verification.

Single FETs, MOSFETs Applications

EV Chargers
Solar Inverters
Motor Drives
UPS Systems
SMPS

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering part number against the manufacturer's datasheet to ensure correct package type and shipping quantity. Confirm that the application environment remains within the specified thermal limits and voltage ratings. Check for any recent product change notices or lifecycle status updates directly from Alpha & Omega Semiconductor before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring low switching losses and robust avalanche energy handling. Ensure the gate driver can supply the recommended +15 V operating voltage. Consider the thermal resistance characteristics when designing heatsinking solutions for continuous currents up to 68 A.

Single FETs, MOSFETs Part Context

This silicon carbide MOSFET belongs to Alpha & Omega Semiconductor's αSiC series, designed for high-efficiency power conversion. It serves as a replacement for traditional silicon devices in high-voltage environments, offering superior thermal stability and switching speed compared to standard silicon counterparts.