Single FETs, MOSFETs AOK033V120X2Q product image

AOK033V120X2Q

$17.48
  • Description:1200V SILICON CARBIDE MOSFET
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube

SKU:0db535b4a9b2 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

AOK033V120X2Q is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is 1200V SILICON CARBIDE MOSFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOK033V120X2Q

  • Description:1200V SILICON CARBIDE MOSFET
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube
  • FET Type:N-Channel
  • Technology:SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss):1200 V
  • Current - Continuous Drain (Id) @ 25°C:68A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):15V
  • Rds On (Max) @ Id, Vgs:43mOhm @ 20A, 15V
  • Vgs(th) (Max) @ Id:2.8V @ 17.5mA
  • Gate Charge (Qg) (Max) @ Vgs:104 nC @ 15 V
  • Vgs (Max):+15V, -5V
  • Input Capacitance (Ciss) (Max) @ Vds:2908 pF @ 800 V
  • FET Feature:-
  • Power Dissipation (Max):300W (Ta)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-247
  • Package / Case:TO-247-3

Single FETs, MOSFETs datasheet and documents for AOK033V120X2Q

AOK033V120X2Q

Single FETs, MOSFETs Overview

The AOK033V120X2Q is a 1200 V αSiC Power MOSFET in a TO-247-3L package. It features a typical RDS(ON) of 33 mΩ at 15 V gate drive and supports a continuous drain current of 68 A at 25°C case temperature, rising to 120 A pulsed. The device exhibits low switching energy (Etot 1052 µJ at 800 V/40 A) and a reverse recovery charge (Qrr) of 227 nC. It includes 100% UIS testing and operates within a junction temperature range of -55°C to 175°C.

Single FETs, MOSFETs Feature Summary

  • Utilizes proprietary αSiC technology for optimized performance
  • Features low on-resistance and fast switching characteristics
  • AEC-Q101 automotive qualified for reliability standards
  • Includes 100% unclamped inductive switching (UIS) testing

Single FETs, MOSFETs Applications

  • xEV Charger
  • Electric Vehicle Supply Equipment (EVSE)
  • Motor Drives
  • Automotive Inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision against your design requirements before procurement. Confirm that the TO-247-3L tube packaging aligns with your assembly line capabilities. Ensure the recommended operating gate voltage of +15 V matches your driver circuit specifications. Validate thermal management strategies based on the provided junction-to-case resistance values.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring robust avalanche capability and low conduction losses. The 1200 V rating suits systems exceeding standard silicon limits. Consider the 15 V gate drive requirement when designing the control interface. Evaluate the thermal derating curves to ensure adequate heat sinking for continuous operation near maximum ratings.

Single FETs, MOSFETs Part Context

This part belongs to Alpha & Omega Semiconductor's αSiC portfolio, designed for high-efficiency power conversion. It represents an advancement over traditional silicon MOSFETs by offering superior thermal stability and switching speeds. The TO-247-3L form factor provides a balance between power handling and mounting simplicity for industrial and automotive modules.

Single FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are available in the source material.

Single FETs, MOSFETs FAQ

What is the maximum transient gate-source voltage?

The maximum transient gate-source voltage (VGS,OP,TRANS) is -8 V to +20 V.

Is the device suitable for high-frequency switching?

Yes, it features low gate resistance (1.7 Ω) and capacitance, enabling fast switching with low turn-on and turn-off times.

AOK033V120X2QAOK033V120X2Q
$17.48
Buy Now