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The AOK20B120E2 is a 1200V, 20A Alpha IGBT with an integrated anti-parallel diode in a TO-247 package. It features a collector-emitter saturation voltage of 1.75V at 25°C and 2.2V at 100°C. The device operates within a junction temperature range of -55°C to 175°C. Key electrical parameters include a gate-emitter threshold voltage of 4.4V to 5.7V, total gate charge of 53.5nC, and turn-off energy of 0.82mJ at 25°C. Thermal resistance from junction to case is 0.6°C/W for the IGBT and 1.6°C/W for the diode.
Verify the specific ordering suffix and package type against official Alpha & Omega Semiconductor documentation before procurement. Confirm that the component meets consumer market qualification standards as critical life support applications are not authorized. Ensure thermal management designs account for the specified junction-to-case thermal resistance values during operation.
Select this component for applications requiring high surge current capability and minimal gate spikes. Consider the high input capacitance when designing gate drive circuits. Evaluate the trade-off between low VCE(sat) and switching losses based on the operating frequency and load conditions. Ensure the selected heat sinking solution maintains the junction temperature within the specified -55°C to 175°C range.
This part belongs to the Alpha IGBT family from Alpha & Omega Semiconductor, designed for consumer power applications. It integrates a fast recovery diode to simplify circuit design in resonant and soft-switching topologies. The TO-247 package provides robust mechanical stability and efficient thermal dissipation for medium-power inverter stages.
Check datasheets for alternative 1200V, 20A IGBTs in TO-247 packages. Verify compatibility of pinouts, thermal characteristics, and switching speeds. Ensure any substitute device meets the same consumer market qualification requirements and does not introduce unintended EMI or thermal issues.
The maximum junction temperature is 175°C.
Yes, it includes a soft and fast recovery anti-parallel diode.
The typical VCE(sat) is 1.75V at TJ=25°C and IC=20A.