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The AOK20B135E1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Alpha & Omega Semiconductor Inc. It features a collector-emitter breakdown voltage of 1350 V and a continuous collector current rating of 20 A at 25°C. The device utilizes standard gate input configuration and is housed in a TO-247-3 through-hole package. Key electrical parameters include a maximum on-state collector-emitter voltage of 2.8 V at 15 V gate drive and 20 A collector current, with a total gate charge of 62 nC. Switching characteristics are defined by turn-off energy of 1.47 mJ under test conditions of 600 V, 30 A, and 10 Ω source resistance. The component operates within a junction temperature range of -55°C to 175°C and supports a pulsed collector current of 60 A.
Verify the specific suffix E1 against official Alpha & Omega Semiconductor datasheets to confirm pinout and packaging details. Confirm RoHS compliance status and check for obsolescence notices or last-time buy notifications directly from the manufacturer before procurement planning.
Select this component when a 1350 V rated IGBT with moderate current handling is required. Ensure the gate driver can supply sufficient current to manage the 62 nC gate charge efficiently. Verify that the thermal management solution can dissipate the specified power losses within the allowed junction temperature limits.
This part belongs to the Alpha IGBT family from Alpha & Omega Semiconductor, designed for high-voltage power conversion. It complements other devices in the series offering varying current ratings while maintaining consistent voltage blocking capabilities for standardized design architectures.
Consult official cross-reference guides from Alpha & Omega Semiconductor for verified substitutes. Ensure any replacement matches the 1350 V rating, TO-247-3 package, and electrical characteristics precisely.