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The AOK20B65M2 is a 650V, 20A Alpha IGBT with an integrated anti-parallel diode in a TO-247 package. It features very fast and soft recovery characteristics for the freewheeling diode. The collector-emitter saturation voltage is typically 1.7V at 25°C and 2.2V at 175°C. Switching parameters at TJ=175°C include turn-on energy of 0.58mJ and turn-off energy of 0.28mJ. Diode reverse recovery time is 292ns with a peak current of 5.6A. Short-circuit withstand time is 5μs. Thermal resistance from junction to case is 0.66°C/W for the IGBT and 1.4°C/W for the diode.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and reel specifications. Confirm that the component meets the required consumer market qualification standards as defined by the datasheet. Check for any recent revisions to the part number or thermal characteristics before finalizing procurement orders.
Select this component for hard switching applications requiring high efficiency and low EMI. Ensure the gate resistor value aligns with the specified switching test conditions (15Ω) for optimal performance. Verify that the operating junction temperature remains within the -55°C to 175°C range during design.
This device belongs to the Alpha IGBT family from Alpha & Omega Semiconductor. It combines a high-voltage N-channel IGBT with a fast recovery diode in a single TO-247 package. The product is designed and qualified specifically for the consumer market segment.
No public confirmed substitute part numbers are available in the provided documentation.
The maximum short-circuit withstand time is 5μs under conditions of VGE=15V, VCC≤400V, and TJ≤175°C.
The typical forward transconductance (gFS) is 14 S.
The diode forward voltage decreases as the junction temperature increases, as shown in the typical electrical characteristics graph.