AOK30B60D1

$1.47

Description：IGBT 600V 60A TO-247
Series：Alpha IGBT™

SKU:5eb9a8a027f4 Category: Single IGBTs Brand: Alpha & Omega Semiconductor Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：IGBT 600V 60A TO-247
Series：Alpha IGBT™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：60 A
Current - Collector Pulsed (Icm)：96 A
Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 26A
Power - Max：208 W
Switching Energy：1.1mJ (on), 240µJ (off)
Input Type：Standard
Gate Charge：34 nC
Td (on/off) @ 25°C：20ns/58ns
Test Condition：400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr)：120 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247
Grade：-
Qualification：-

Download product information

AOK30B60D1

Overview

The AOK30B60D1 is a 600V, 30A Alpha IGBT with an integrated diode manufactured by Alpha & Omega Semiconductor Inc. It features a collector-emitter saturation voltage of 1.85V at 25°C and 2.4V maximum at 25°C under specified conditions. The device operates within a junction temperature range of -55°C to 150°C and utilizes a TO-247 package. Key electrical parameters include a gate charge of 34nC, short-circuit withstand time of 500ns, and total switching energy of 1.34mJ at 25°C. Thermal characteristics specify a maximum junction-to-case resistance of 0.6°C/W for the IGBT and 1.7°C/W for the diode.

Feature Summary

Designed for ease of paralleling and robust short circuit capability.
Minimizes gate spikes under high dV/dt conditions and resists oscillations.
Soft co-packaged diode targets minimal losses in specific power applications.

Applications

Welding machines
Solar Inverter systems
UPS applications

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm datasheet revision status matches design requirements. Ensure thermal management solutions align with specified junction-to-case resistance values. Validate that application environments remain within the stated operating temperature limits. Review manufacturer terms regarding liability for life support devices.

Selection Notes

Evaluate thermal impedance curves against expected duty cycles and pulse widths. Compare switching energy values across different gate resistances and temperatures. Assess softness factor and reverse recovery characteristics for diode performance. Verify compatibility with drive voltage levels and short-circuit protection timing.

Part Context

This component belongs to the Alpha IGBT line, which emphasizes low conduction and switching losses. It integrates a standard N-channel insulated gate bipolar transistor with a complementary diode in a single TO-247 package. The series focuses on reliability and ease of use in medium-power conversion circuits.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FAQ

What is the maximum short-circuit withstand time?

The maximum short-circuit withstand time is 500ns when VGE=15V, VCE≤400V, and TC=25°C.

How does the diode forward voltage vary with temperature?

The diode forward voltage decreases as junction temperature increases, dropping from approximately 2.1V at 25°C to lower values at 150°C under constant current.