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The AOK60B65HQ3 is a 650V AlphaIGBT with an integrated soft and fast recovery anti-parallel diode, housed in a TO-247 package. It features a collector-emitter saturation voltage of 1.95V at 25°C and supports a continuous collector current of 60A at 100°C. The device exhibits low switching losses, with turn-on energy of 2.21mJ and turn-off energy of 1.20mJ at 25°C. Its integrated diode demonstrates a reverse recovery time of 106ns and charge of 0.24mC under specified conditions.
Verify the specific ordering suffix HQ3 against official manufacturer documentation to confirm exact electrical tolerances and thermal characteristics. Ensure compliance with export control regulations and applicable legal requirements before procurement. Confirm that the intended application does not involve life support devices or systems, as such usage is explicitly unauthorized.
Select this component for designs requiring a 650V IGBT with an integrated freewheeling diode. Evaluate the thermal impedance curves and derating factors to ensure junction temperature limits are respected under expected load conditions. Consider the gate resistance impact on switching times when designing the driver circuitry for optimal performance.
This part belongs to the AlphaIGBT series from Alpha & Omega Semiconductor Inc., designed for high-efficiency power conversion applications. The TO-247 form factor provides robust through-hole mounting capabilities suitable for industrial and renewable energy systems requiring reliable high-current handling.
No public confirmed substitute part numbers are available in the provided source material.
The junction and storage temperature range is -55°C to 175°C.
The diode forward voltage decreases as the junction temperature increases, as shown in the typical electrical characteristics graph.
The maximum lead temperature for soldering purposes is 300°C, measured 1/8 inch from the case for 5 seconds.