SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The AOK60B65M3 is a 650V, 60A Alpha IGBT in a TO-247 package. It features an integrated anti-parallel diode with soft and fast recovery characteristics. Key electrical parameters include a collector-emitter saturation voltage of 1.94V at 25°C and 2.35V at 125°C (VGE=15V, IC=60A). Total gate charge is 106nC, with turn-off energy of 1.3mJ and turn-on energy of 2.6mJ at TJ=25°C. The device supports a maximum junction temperature of 175°C and offers high short-circuit ruggedness.
Verify the specific ordering suffix against official manufacturer documentation to confirm exact packaging and revision status. Confirm that the component meets required environmental standards such as RoHS compliance before finalizing procurement plans. Ensure all technical specifications align with the target application requirements.
Select this component for applications requiring high breakdown voltage and robust short-circuit withstand capability. Consider the thermal resistance values when designing heat sinks for continuous operation. Evaluate the switching energy losses against the system's thermal management constraints to ensure optimal performance under varying load conditions.
This part belongs to the Alpha IGBT family from Alpha & Omega Semiconductor Inc. It is designed for consumer market applications and is not authorized for use in life support devices or systems. The product has been qualified for general purpose power switching tasks within its specified electrical limits.
Check datasheets for alternative IGBTs with similar 650V ratings and comparable TO-247 packages. Verify pinout compatibility and ensure equivalent switching speeds and thermal characteristics are maintained during substitution.
The maximum short-circuit withstand time is 5 microseconds.
The reverse recovery time is 346 ns at TJ=25°C and 557 ns at TJ=175°C.
The junction and storage temperature range is -55°C to 175°C.