Single FETs, MOSFETs AOK66613 product image

AOK66613

$4.70
  • Description:MOSFET N-CH 60V 58.5A/120A TO247
  • Series:AlphaSGT™
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube

SKU:d181ab4d7cbf Category: Brand:

  
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AOK66613 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 60V 58.5A/120A TO247. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOK66613

  • Description:MOSFET N-CH 60V 58.5A/120A TO247
  • Series:AlphaSGT™
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:58.5A (Ta), 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):8V, 10V
  • Rds On (Max) @ Id, Vgs:2.5mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:5300 pF @ 30 V
  • FET Feature:-
  • Power Dissipation (Max):15.6W (Ta), 312W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-247
  • Package / Case:TO-247-3

Single FETs, MOSFETs datasheet and documents for AOK66613

AOK66613

Single FETs, MOSFETs Overview

The AOK66613 is a 60V N-Channel MOSFET utilizing AlphaSGT™ trench technology in a TO-247 package. It features a maximum drain-source voltage of 60V and continuous drain current ratings of 48A at 25°C ambient and 120A at case temperature. The device exhibits low on-resistance, with RDS(ON) less than 2.5mΩ at VGS=10V and 3.0mΩ at VGS=8V. Key electrical parameters include a gate threshold voltage range of 2.3V to 3.5V, total gate charge of 78nC typical at 10V, and input capacitance of 5300pF. Thermal characteristics specify a junction-to-case resistance of 0.48°C/W and a maximum junction temperature of 175°C.

Single FETs, MOSFETs Feature Summary

  • AlphaSGT™ Trench Power Technology for optimized performance
  • Low On-Resistance (RDS(ON)) across standard gate drive voltages
  • Excellent Gate Charge x RDS(ON) Figure of Merit (FOM)
  • 100% Unclamped Inductive Switching (UIS) Tested

Single FETs, MOSFETs Applications

  • High Frequency Switching
  • Synchronous Rectification
  • BLDC Motor Control

Single FETs, MOSFETs Procurement Notes

Verify the specific part number suffix against the manufacturer's official documentation to ensure correct packaging and revision status. Confirm that the component meets RoHS3 compliance requirements if applicable to your design constraints. Review the datasheet for any recent Product Change Notices (PCN) regarding manufacturing location or material updates before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring robust high-current handling and efficient switching at 60V levels. The TO-247 package facilitates effective thermal management through direct heatsinking. Ensure the gate driver can supply sufficient current to manage the 78nC gate charge for optimal switching speeds. Evaluate the Safe Operating Area (SOA) curves to confirm suitability for pulsed load conditions within the specified thermal limits.

Single FETs, MOSFETs Part Context

This device belongs to the AlphaSGT™ family from Alpha & Omega Semiconductor Inc., designed for power conversion efficiency. It serves as a discrete power switch alternative to integrated solutions where external control logic is preferred. The TO-247 form factor distinguishes it from surface-mount variants like the AOT series, offering higher thermal dissipation capabilities for industrial and automotive environments.

Single FETs, MOSFETs Replacement Considerations

Direct pin-compatible replacements should be verified via official cross-reference lists. Consider devices with similar VDS, ID, and RDS(ON) specifications in the TO-247 package. Ensure replacement parts match the AlphaSGT™ technology profile for comparable switching characteristics and UIS ruggedness.

Single FETs, MOSFETs FAQ

What is the maximum junction temperature for the AOK66613?

The maximum junction temperature (TJ) and storage temperature range is -55°C to 175°C.

Is the AOK66613 tested for avalanche energy?

Yes, the datasheet specifies that the device is 100% Unclamped Inductive Switching (UIS) tested.

What is the typical total gate charge (Qg) at VGS=10V?

The typical total gate charge (Qg) is 78nC when measured at VGS=10V and VDS=30V.

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