AOKS40B65H2AL

AOKS40B65H2AL

$1.39
  • Description:IGBT 650V 80A TO-247
  • Series:AlphaIGBT™

SKU:8fd2c9ca37c6 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT 650V 80A TO-247
  • Series:AlphaIGBT™
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):80 A
  • Current - Collector Pulsed (Icm):120 A
  • Vce(on) (Max) @ Vge, Ic:2.6V @ 15V, 40A
  • Power - Max:260 W
  • Switching Energy:1.17mJ (on), 540µJ (off)
  • Input Type:Standard
  • Gate Charge:61 nC
  • Td (on/off) @ 25°C:30ns/117ns
  • Test Condition:400V, 40A, 7.5Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247
  • Grade:-
  • Qualification:-

Download product information

AOKS40B65H2AL

Overview

The AOKS40B65H2AL is a 650V AlphaIGBT in a TO-247 package. It supports an 80A continuous collector current at 25°C case temperature and 40A at 100°C. The saturation voltage is 2.05V at 25°C and 40A. Switching parameters at 150°C include turn-on energy of 1.27mJ and turn-off energy of 0.78mJ. Total gate charge is 61nC. Thermal resistance junction-to-case is 0.48°C/W. Maximum junction temperature is 150°C.

Feature Summary

  • Utilizes latest AlphaIGBT technology for high switching speed and efficiency.
  • Features very high turn-on di/dt controllability and low turn-off switching loss.
  • Provides soft turn-off characteristics with very good EMI behavior.

Applications

  • Power Factor Correction (PFC) circuits
  • Very high switching frequency applications

Procurement Notes

Verify the specific ordering suffix against official Alpha & Omega Semiconductor documentation to confirm exact packaging and reel specifications. Ensure thermal management designs account for the 0.48°C/W junction-to-case resistance under expected operating conditions.

Selection Notes

Select this component for designs requiring 650V blocking capability with moderate current handling up to 40A at elevated temperatures. Consider the 2.05V saturation voltage for conduction loss calculations and the 61nC total gate charge for driver selection.

Part Context

This part belongs to the AlphaIGBT family from Alpha & Omega Semiconductor, designed for power conversion applications. It integrates advanced IGBT technology to optimize switching performance and electromagnetic interference compared to standard discrete devices.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FAQ

What is the maximum collector-emitter breakdown voltage?

The maximum collector-emitter breakdown voltage is 650V.

How does the saturation voltage vary with temperature?

At 25°C, VCE(sat) is typically 2.05V. At 125°C, it rises to 2.57V, and at 150°C, it reaches 2.71V under 40A load.

What is the typical total gate charge?

The typical total gate charge (Qg) is 61nC when measured at VGE=15V and VCC=520V with IC=40A.

AOKS40B65H2ALAOKS40B65H2AL
$1.39
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