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The AOKS40B65H2AL is a 650V AlphaIGBT in a TO-247 package. It supports an 80A continuous collector current at 25°C case temperature and 40A at 100°C. The saturation voltage is 2.05V at 25°C and 40A. Switching parameters at 150°C include turn-on energy of 1.27mJ and turn-off energy of 0.78mJ. Total gate charge is 61nC. Thermal resistance junction-to-case is 0.48°C/W. Maximum junction temperature is 150°C.
Verify the specific ordering suffix against official Alpha & Omega Semiconductor documentation to confirm exact packaging and reel specifications. Ensure thermal management designs account for the 0.48°C/W junction-to-case resistance under expected operating conditions.
Select this component for designs requiring 650V blocking capability with moderate current handling up to 40A at elevated temperatures. Consider the 2.05V saturation voltage for conduction loss calculations and the 61nC total gate charge for driver selection.
This part belongs to the AlphaIGBT family from Alpha & Omega Semiconductor, designed for power conversion applications. It integrates advanced IGBT technology to optimize switching performance and electromagnetic interference compared to standard discrete devices.
No public confirmed substitute part numbers are available in the provided documentation.
The maximum collector-emitter breakdown voltage is 650V.
At 25°C, VCE(sat) is typically 2.05V. At 125°C, it rises to 2.57V, and at 150°C, it reaches 2.71V under 40A load.
The typical total gate charge (Qg) is 61nC when measured at VGE=15V and VCC=520V with IC=40A.