AOM015V65X2

$20.83

Description：650V SILICON CARBIDE MOSFET
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube

SKU:6c51e894d774 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

AOM015V65X2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is 650V SILICON CARBIDE MOSFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOM015V65X2

Description：650V SILICON CARBIDE MOSFET
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：96A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：22mOhm @ 24A, 15V
Vgs(th) (Max) @ Id：3.5V @ 24mA
Gate Charge (Qg) (Max) @ Vgs：152 nC @ 15 V
Vgs (Max)：+15V, -5V
Input Capacitance (Ciss) (Max) @ Vds：4880 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：312W (Tj)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-4L
Package / Case：TO-247-4

Single FETs, MOSFETs datasheet and documents for AOM015V65X2

AOM015V65X2

Single FETs, MOSFETs Overview

The AOM015V65X2 is a 650V αSiC Silicon Carbide Power MOSFET in a TO-247-4L package. It features a maximum continuous drain current of 96A at 25°C and a pulsed drain current of 200A. The typical on-resistance (RDS(ON)) is 15mΩ at VGS=15V and TJ=25°C, rising to 23mΩ at 175°C. Key dynamic parameters include a total gate charge (Qg) of 152nC, body diode reverse recovery charge (Qrr) of 211nC, and stored output capacitance energy (EOSS) of 36µJ at 400V. The device supports a junction temperature range of -55°C to 175°C.

Single FETs, MOSFETs Feature Summary

Utilizes proprietary αSiC technology for low on-resistance increase with temperature
Features fast switching capabilities with low gate resistance and capacitance
Optimized for a 15V gate drive voltage
Includes an ultra-fast body diode with low reverse recovery charge

Single FETs, MOSFETs Applications

Power Supplies
Energy Storage Systems
EV Charging Infrastructure
Solar Inverters
Motor Drives

Single FETs, MOSFETs Procurement Notes

Verify the specific revision number against the latest Alpha & Omega Semiconductor datasheet before finalizing designs. Confirm that the TO-247-4L pinout matches the intended circuit layout, particularly the source connection. Ensure thermal management solutions account for the specified junction-to-case thermal resistance values under actual operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component for high-efficiency applications requiring robust avalanche capability and low switching losses. The 15mΩ RDS(ON) offers a balance between conduction loss and cost. Consider the 15V gate drive requirement when designing driver circuits. Evaluate the thermal derating curves to ensure safe operation within the 175°C junction limit during peak loads.

Single FETs, MOSFETs Part Context

This part belongs to the αSiC series from Alpha & Omega Semiconductor, designed for high-voltage silicon carbide applications. It replaces older silicon-based MOSFETs in systems demanding higher frequency operation and improved thermal performance. The TO-247-4L package provides enhanced thermal dissipation compared to standard three-terminal packages.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes are not explicitly listed in the provided documentation. When evaluating alternatives, match the 650V rating, TO-247-4L package, and similar RDS(ON) and Qrr specifications. Verify compatibility with existing gate drive voltages and thermal constraints.