AOM065V120X2Q

$11.36

Description：1200V SILICON CARBIDE MOSFET
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube

SKU:9045a02ace90 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

AOM065V120X2Q is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is 1200V SILICON CARBIDE MOSFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOM065V120X2Q

Description：1200V SILICON CARBIDE MOSFET
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：40.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：85mOhm @ 10A, 15V
Vgs(th) (Max) @ Id：3.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs：62.3 nC @ 15 V
Vgs (Max)：+15V, -5V
Input Capacitance (Ciss) (Max) @ Vds：1716 pF @ 800 V
FET Feature：-
Power Dissipation (Max)：187.5W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-247-4L
Package / Case：TO-247-4

Single FETs, MOSFETs datasheet and documents for AOM065V120X2Q

AOM065V120X2Q

Single FETs, MOSFETs Overview

The AOM065V120X2Q is a 1200 V αSiC Silicon Carbide Power MOSFET in a TO-247-4L package. It features a typical RDS(ON) of 65 mΩ at 15 V gate drive and supports an 85 A pulsed drain current. The device exhibits low switching losses, with a total switching energy of 151 µJ and a body diode reverse recovery charge (Qrr) of 142 nC. It is fully tested for unclamped inductive switching (UIS) up to 250 mJ and meets AEC-Q101 automotive qualification standards.

Single FETs, MOSFETs Feature Summary

Utilizes proprietary αSiC technology for optimized high-voltage performance
Features fast switching characteristics enabled by low gate resistance and capacitance
Demonstrates low reverse recovery charge for efficient body diode operation
Qualified under AEC-Q101 automotive reliability standards

Single FETs, MOSFETs Applications

xEV Charger systems
Electric Vehicle Supply Equipment (EVSE)
Motor Drives
Automotive Inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'Q' corresponds to the required automotive qualification status before procurement. Confirm that the TO-247-4L tube packaging aligns with assembly line requirements. Ensure the recommended operating gate voltage of +15 V matches the system's driver capabilities to maintain optimal on-resistance and switching performance.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high breakdown voltage combined with low conduction losses. The 1200 V rating suits high-voltage DC bus applications. Consider the thermal resistance of 0.8 °C/W when designing heatsinking solutions. Verify that the system can accommodate the 15 V gate drive requirement to achieve the specified 65 mΩ on-resistance.

Single FETs, MOSFETs Part Context

This part belongs to Alpha & Omega Semiconductor's αSiC product line, designed for advanced power conversion needs. It replaces standard silicon MOSFETs in high-efficiency applications where reduced switching loss and higher temperature tolerance are critical. The TO-247-4L form factor provides robust mechanical mounting for industrial and automotive environments.