Single FETs, MOSFETs AON2705 product image

AON2705

  • Description:MOSFET P-CH 30V 3A 6DFN
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)

SKU:bc08cc57a3a8 Category: Brand:

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AON2705 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET P-CH 30V 3A 6DFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AON2705

  • Description:MOSFET P-CH 30V 3A 6DFN
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:108mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id:2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:6 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:180 pF @ 15 V
  • FET Feature:Schottky Diode (Body)
  • Power Dissipation (Max):1.5W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:6-DFN (2x2)
  • Package / Case:6-WDFN Exposed Pad

Single FETs, MOSFETs datasheet and documents for AON2705

AON2705

Single FETs, MOSFETs Overview

The AON2705 is a P-Channel Enhancement Mode MOSFET integrated with a Schottky diode, manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to achieve low on-resistance and gate charge. The device features a -30V drain-source voltage rating and a continuous drain current of -3.0A at VGS=-10V. On-state resistance is less than 108mΩ at VGS=-10V and less than 165mΩ at VGS=-4.5V. The integrated Schottky diode provides a reverse voltage of 20V and a forward current of 2A. Packaged in a DFN 2x2 footprint, it supports junction temperatures up to 150°C.

Single FETs, MOSFETs Feature Summary

  • Advanced trench technology for optimized on-resistance and switching performance
  • Integrated Schottky diode facilitates bidirectional blocking switch implementation
  • Low gate charge characteristics suitable for high-frequency applications
  • DFN 2x2 package design for compact surface-mount solutions

Single FETs, MOSFETs Applications

  • Bidirectional blocking switches
  • DC-DC conversion circuits
  • Consumer power management systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Alpha & Omega Semiconductor documentation to confirm exact electrical tolerances and packaging configurations. Ensure compatibility with standard DFN 2x2 footprints during PCB layout. Confirm component status as active or obsolete through authorized distributors before procurement planning.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a compact P-Channel MOSFET with an integrated protection diode. Evaluate thermal resistance requirements based on the specific FR-4 board copper area and ambient conditions. Verify that the gate drive voltage levels align with the specified threshold and on-resistance curves for optimal efficiency.

Single FETs, MOSFETs Part Context

This part belongs to Alpha & Omega Semiconductor's portfolio of power MOSFETs designed for consumer electronics. The company specializes in trench technology devices that balance conduction losses with switching speeds. The AON2705 integrates discrete functions into a single small outline package to reduce system complexity.

Single FETs, MOSFETs Replacement Considerations

No direct substitute part numbers are documented in the provided source material.

AON2705AON2705

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