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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 4.5A 6DFN
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Common Drain
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：4.5A
- Rds On (Max) @ Id, Vgs：47mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：435pF @ 10V
- Power - Max：1.5W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-WDFN Exposed Pad
- Supplier Device Package：6-DFN (2x2)
- Grade：-
- Qualification：-
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Overview
The AON2800 is a dual N-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor. It integrates two independent N-channel MOSFETs within a single DFN-6 package, designed for space-constrained applications. The device supports a drain-source voltage (Vds) of 20 V and a continuous drain current (Ids) of 3 A. Key electrical parameters include an input capacitance (Ciss) of 700 pF at 10 V, with rise and fall times of 40 ns and 46 ns respectively. It operates within a temperature range of -55 °C to 150 °C and has a maximum power dissipation of 1.5 W.
Feature Summary
- Dual configuration integrating two N-channel MOSFETs in a compact surface-mount package.
Applications
- Low-side switching in portable electronic devices.
Part Context
The AON2800 belongs to the AON28xx series of dual MOSFETs from Alpha & Omega Semiconductor. This family includes complementary variants such as the AON2801 (dual P-channel), AON2802 (30V dual N-channel), and AON2803 (20V dual P-channel). These components are engineered to provide efficient power management solutions in minimal footprint designs.
