AON2801

Overview

The AON2801 is a dual P-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to achieve low on-resistance and gate charge, supporting operation with gate voltages as low as 1.8V. The device features a drain-source voltage of -20V and a continuous drain current of -3A at 25°C. Key electrical parameters include an on-resistance of less than 120mΩ at VGS=-4.5V, a maximum junction temperature of 150°C, and a power dissipation of 1.5W. It is housed in a compact DFN 2x2 package.

Feature Summary

• Advanced trench technology for excellent RDS(ON) and low gate charge
• Dual P-Channel Enhancement Mode configuration
• Suitable for load switch and PWM applications

Applications

• Load switching
• PWM applications

Procurement Notes

Verify the component against official datasheets to confirm specifications such as voltage ratings, current limits, and thermal characteristics. Ensure compliance with RoHS and halogen-free standards required for your specific manufacturing processes. Cross-reference part numbers with authorized distributors to validate authenticity and traceability before procurement.

Selection Notes

Select this component based on its -20V rating and -3A continuous current capability. Consider the low gate threshold voltage for compatibility with logic-level control signals. Evaluate the thermal performance within the DFN 2x2 package against your board's heat dissipation capabilities and ambient operating conditions.

Part Context

This component belongs to the family of dual P-channel MOSFETs from Alpha & Omega Semiconductor. It is designed for space-constrained applications requiring efficient power switching. The DFN 2x2 package provides a compact footprint suitable for modern surface-mount assembly techniques.

Replacement Considerations

SI4485DY-T1-GE3 is listed as a direct substitute.