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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 3.8A 6DFN
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：3.8A
- Rds On (Max) @ Id, Vgs：70mOhm @ 3.8A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：560pF @ 10V
- Power - Max：1.5W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-WDFN Exposed Pad
- Supplier Device Package：6-DFN (2x2)
- Grade：-
- Qualification：-
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Overview
The AON2803 is a dual P-channel MOSFET manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to achieve low on-resistance and gate charge, supporting operation with gate voltages as low as 1.8V. The device features a drain-source voltage of -20V and a continuous drain current of -3.8A at VGS=-4.5V. On-resistance values are less than 70mΩ at VGS=-4.5V, less than 90mΩ at VGS=-2.5V, and less than 115mΩ at VGS=-1.8V. It is housed in a DFN 2x2 package with a maximum junction temperature of 150°C.
Feature Summary
- Advanced trench technology provides excellent on-resistance and low gate charge characteristics.
- Capable of operation with gate voltages as low as 1.8V for efficient drive requirements.
- Dual configuration suitable for load switching or PWM applications.
Applications
- Load switch implementations
- PWM (Pulse Width Modulation) control circuits
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout and thermal pad configurations. Ensure compliance with RoHS standards and check for any lead-free certifications required by the target market regulations before finalizing procurement orders.
Selection Notes
Select this component when a compact dual P-channel solution is required for low-voltage applications. Consider the 1.8V gate drive capability for compatibility with low-power logic controllers. Evaluate the thermal performance based on the specific PCB copper area available for heat dissipation.
Part Context
This part belongs to the AON280 series of dual MOSFETs from Alpha & Omega Semiconductor. The series includes complementary N-channel variants such as the AON2800 and AON2802, offering design flexibility for bridge or half-bridge topologies requiring matched electrical characteristics.
Replacement Considerations
Direct substitutes include the AO6804A and AON3806, which share similar 20V dual N-channel specifications. For direct P-channel replacements, verify pin compatibility and electrical parameters against the AON2800 if polarity inversion is acceptable in the circuit design.
FAQ
What is the minimum gate-source voltage required for effective switching?
The device supports operation with gate voltages as low as 1.8V, though optimal on-resistance is achieved at -4.5V.
What is the maximum junction temperature rating?
The maximum junction temperature is rated at 150°C.
How does the on-resistance vary with gate voltage?
On-resistance increases as gate voltage decreases; it is less than 70mΩ at -4.5V, less than 90mΩ at -2.5V, and less than 115mΩ at -1.8V.
