AON2809

Description：MOSFET 2P-CH 12V 2A 6DFN
Series：-

SKU:8bff0aec2605 Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 12V 2A 6DFN
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：12V
Current - Continuous Drain (Id) @ 25°C：2A
Rds On (Max) @ Id, Vgs：68mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id：900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：4.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：415pF @ 6V
Power - Max：2.1W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-WDFN Exposed Pad
Supplier Device Package：6-DFN (2x2)
Grade：-
Qualification：-

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AON2809

Overview

The AON2809 is a dual P-channel MOSFET featuring advanced trench technology for low on-resistance. It operates with a drain-source voltage of -12V and continuous drain current of -2A at VGS=-4.5V. On-resistance is less than 68mΩ at -4.5V, 90mΩ at -2.5V, and 118mΩ at -1.8V. The device includes typical HBM Class 2 ESD protection and is housed in a DFN 2x2A package.

Feature Summary

Dual P-Channel Configuration
Advanced Trench Technology
Low Resistance Package
ESD Protection

Applications

Load Switch
Battery Protection

Procurement Notes

Verify the specific datasheet revision (Rev 0: Nov. 2012) against your design requirements. Confirm that the component meets consumer market standards as it is not authorized for life support devices. Ensure thermal management aligns with the specified junction-to-ambient resistance values.

Selection Notes

Select this component for applications requiring compact dual P-channel switching. Evaluate gate drive voltages to ensure RDS(ON) remains within acceptable limits. Consider the DFN 2x2A package size for space-constrained designs. Verify thermal dissipation capabilities under expected load conditions.

Part Context

This part belongs to Alpha & Omega Semiconductor's lineup of dual MOSFETs designed for efficient power management. It utilizes trench technology to achieve low on-resistance in a small footprint. The device is intended for general consumer electronics applications where space and efficiency are critical factors.