ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 2A 6DFN
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：2A
- Rds On (Max) @ Id, Vgs：44mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id：1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：235pF @ 15V
- Power - Max：2.5W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-WDFN Exposed Pad
- Supplier Device Package：6-DFN (2x2)
- Grade：-
- Qualification：-
Download product information
Overview
The AON2810 is a dual N-channel enhancement mode MOSFET from Alpha & Omega Semiconductor, utilizing Trench Power AlphaMOS technology. It features a drain-source voltage of 30V and a continuous drain current of 2A at 25°C. The device offers low on-resistance values of less than 44 mW at VGS=10V, 52 mW at VGS=4.5V, and 74 mW at VGS=2.5V. Key electrical parameters include a gate threshold voltage range of 0.6V to 1.4V, input capacitance of 235 pF, and total gate charge of 4.5 nC at 10V. The component operates within a junction temperature range of -55°C to 150°C and is housed in a DFN 2x2 package.
Feature Summary
- Low RDS(ON) performance optimized for operation at VGS levels as low as 2.5V
- Integrated ESD protection rated at HBM Class 3
- Utilizes latest Trench Power AlphaMOS (αMOS LV) technology
Applications
- DC/DC Converters
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact packaging and tape specifications. Ensure compliance with RoHS and Halogen-Free requirements as stated in the datasheet. Confirm that the intended application does not involve life support systems, as such usage is explicitly unauthorized by the manufacturer.
Selection Notes
Select this component for applications requiring low gate drive voltages due to its optimized RDS(ON) at 2.5V. Consider the thermal characteristics, specifically the junction-to-ambient resistance, when designing PCB layouts. Evaluate the switching speed parameters, including turn-on and turn-off times, against the target frequency requirements of the circuit design.
Part Context
The AON2810 belongs to the AON28xx series of dual MOSFETs manufactured by Alpha & Omega Semiconductor. This series utilizes advanced trench technology to provide high performance in compact packages. The dual configuration allows for efficient power management solutions in space-constrained designs while maintaining robust electrical characteristics.
Replacement Considerations
Consult the manufacturer's official cross-reference documentation for verified substitute part numbers. Do not assume functional equivalence based solely on pinout or voltage ratings without verifying detailed electrical parameters.
