AON3611

$0.73

Description：MOSFET N/P-CH 30V 5A/6A 8DFN
Series：-

SKU:3ecde437fcb7 Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 30V 5A/6A 8DFN
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel, Common Drain
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：5A, 6A
Rds On (Max) @ Id, Vgs：50mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：170pF @ 15V
Power - Max：2.1W, 2.5W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SMD, Flat Leads
Supplier Device Package：8-DFN (3x3)
Grade：-
Qualification：-

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AON3611

Overview

The AON3611 is a complementary MOSFET array featuring one N-channel and one P-channel transistor in an 8-DFN (3x3) package. The N-channel device provides a drain-source voltage of 30V, continuous drain current of 5A, and on-resistance below 50mΩ at VGS=10V. The P-channel counterpart offers -30V breakdown, -6A current capability, and on-resistance under 38mΩ at VGS=-10V. Both transistors utilize advanced trench technology to achieve low gate charge and high switching efficiency. The component supports a maximum junction temperature of 150°C and operates within a storage temperature range of -55°C to 150°C.

Feature Summary

Complementary N-channel and P-channel configuration for bridge applications
Advanced trench technology for optimized on-resistance and gate charge
Logic-level gate drive compatibility with low threshold voltages

Applications

Inverter circuits
Motor control systems
Power management modules

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and lead-free certification requirements prior to procurement. Ensure the selected variant matches the required thermal performance characteristics for the intended application environment.

Selection Notes

Select this component for designs requiring matched complementary pairs in compact surface-mount layouts. Evaluate the thermal resistance values relative to the PCB copper area and airflow conditions. Consider the gate charge parameters when designing driver circuits to optimize switching speed and minimize power loss during transitions.

Part Context

This part belongs to Alpha & Omega Semiconductor's portfolio of complementary MOSFET arrays designed for space-constrained power applications. It utilizes the DFN-8-EP (3x3mm) package to provide efficient heat dissipation through an exposed pad. The series targets cost-sensitive designs requiring reliable switching performance in consumer and industrial electronics.