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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 4.5A 8DFN
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel, Common Drain
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：4.5A
- Rds On (Max) @ Id, Vgs：52mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：245pF @ 15V
- Power - Max：2.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SMD, Flat Leads
- Supplier Device Package：8-DFN (3x3)
- Grade：-
- Qualification：-
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Overview
The AON3613 is a complementary MOSFET from Alpha & Omega Semiconductor, integrating one N-channel and one P-channel device in an 8-lead DFN 3x3 package. The N-channel unit offers a drain-source voltage of 30V and continuous current of 4.5A at 25°C, with on-resistance below 52mΩ at VGS=10V. The P-channel counterpart provides -30V and -4.5A, featuring on-resistance under 68mΩ at VGS=-10V. Both transistors utilize advanced trench technology for low gate charge and include ESD protection rated at HBM Class 3A.
Feature Summary
- Complementary configuration integrates N-channel and P-channel MOSFETs within a single compact footprint.
- Advanced trench technology delivers low on-resistance and reduced gate charge for efficient switching.
- Integrated electrostatic discharge protection meets Human Body Model Class 3A standards.
Applications
- Inverter circuits
- Motor control applications
- Power management systems
Procurement Notes
Verify the component against official datasheets to confirm electrical parameters and physical dimensions. Ensure the ordering suffix matches the required packaging format. Confirm RoHS compliance status prior to integration into designs requiring restricted substance limitations.
Selection Notes
Select this component for designs requiring matched N/P-channel pairs in space-constrained layouts. Evaluate thermal performance based on specific board copper area and ambient conditions, as junction-to-ambient resistance varies significantly with PCB layout.
Part Context
This part belongs to the Alpha & Omega Semiconductor complementary MOSFET family. It utilizes a DFN 3x3 package to provide a small form factor solution for dual-transistor requirements without sacrificing current handling capabilities typical of larger packages.
Replacement Considerations
Check pinout compatibility and thermal characteristics when substituting. Verify that alternative parts meet the same 30V rating and current capacity requirements for both N-channel and P-channel units.
FAQ
What is the maximum junction temperature for the AON3613?
The maximum junction temperature is 150°C.
Does the AON3613 include internal body diodes?
Yes, both the N-channel and P-channel MOSFETs contain intrinsic body diodes.
What is the gate threshold voltage range for the N-channel device?
The gate threshold voltage ranges from 0.7V to 1.5V at ID=250µA.
