AON3816_101

AON3816_101

  • Description:MOSFET 2N-CH 20V 8DFN
  • Series:-

SKU:d8d4912a54e9 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET 2N-CH 20V 8DFN
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual) Common Drain
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:-
  • Rds On (Max) @ Id, Vgs:22mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id:1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:13nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:1100pF @ 10V
  • Power - Max:2.5W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SMD, Flat Leads
  • Supplier Device Package:8-DFN (3x3)
  • Grade:-
  • Qualification:-

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AON3816_101

Overview

The AON3816 is a dual N-channel MOSFET utilizing advanced trench technology to deliver low on-resistance and gate charge. It supports operation with gate voltages as low as 1.8V while maintaining a 12V maximum gate-source rating. The device features a common-drain configuration suitable for uni-directional or bi-directional load switching applications. Key electrical parameters include a drain-source voltage of 20V, a continuous drain current of 4A at VGS=4.5V, and an on-resistance below 22mΩ at VGS=4.5V. It is housed in a DFN 3x3 package.

Feature Summary

  • Advanced trench technology provides excellent RDS(ON) performance and low gate charge characteristics.
  • Capable of operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating.
  • Common-drain configuration facilitates use as a uni-directional or bi-directional load switch.
  • Integrated ESD protection enhances component reliability during handling.

Applications

  • Uni-directional load switching
  • Bi-directional load switching

Procurement Notes

Verify the specific ordering suffix against official Alpha & Omega Semiconductor documentation to confirm exact packaging and tape-and-reel specifications. Ensure the component meets consumer market qualification standards, as critical life support applications are not authorized. Confirm thermal management requirements align with the specified junction-to-ambient resistance values for your board design.

Selection Notes

Select this component for applications requiring low-voltage control signals due to its 1.8V operational capability. Evaluate the 20V drain-source voltage limit to ensure compatibility with system power rails. Consider the DFN 3x3 package size for space-constrained designs and verify that the 4A continuous current rating meets the load requirements under expected thermal conditions.

Part Context

The AON3816 belongs to Alpha & Omega Semiconductor's portfolio of dual N-channel MOSFETs designed for efficient power management. It leverages trench technology to optimize switching performance and conduction losses. This series targets consumer electronics where low voltage drive and compact footprint are prioritized over high-power industrial ratings.

Replacement Considerations

Consult official manufacturer substitution guides for verified equivalent parts. Ensure any replacement maintains the 20V VDS rating, dual channel configuration, and compatible DFN 3x3 footprint. Verify that alternative components meet the same low gate voltage operational requirements and thermal characteristics.

FAQ

What is the minimum gate voltage required for the AON3816 to operate?

The AON3816 is designed to operate with gate voltages as low as 1.8V.

Is the AON3816 suitable for critical life support devices?

No, the product has been designed and qualified for the consumer market. Applications as critical components in life support devices or systems are not authorized.

What is the maximum gate-source voltage rating?

The maximum gate-source voltage (VGS) rating is ±12V.

AON3816_101AON3816_101

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