SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The AON3818 is a dual N-channel MOSFET from Alpha & Omega Semiconductor, utilizing αMOS LV technology. It features a 24V drain-source voltage and an 8A continuous drain current at VGS=4.5V. The device offers low on-resistance, with RDS(ON) values below 13.5mΩ at VGS=4.5V, 14mΩ at 4.0V, 15mΩ at 3.7V, 17mΩ at 3.1V, and 21mΩ at 2.5V. Total gate charge is typically 9.5nC. It operates within a junction temperature range of -55°C to 150°C and is housed in a DFN 3x3 package.
Verify the specific orderable part number against the manufacturer's official documentation to ensure correct packaging and minimum order quantity specifications. Confirm RoHS compliance status directly with the supplier or through the latest datasheet revision notes prior to procurement.
Select this component for applications requiring low on-resistance across various gate drive voltages. Ensure the operating junction temperature remains within the specified -55°C to 150°C range. Verify that the thermal design accommodates the junction-to-ambient resistance characteristics for the intended PCB layout.
This component belongs to the αMOS LV series by Alpha & Omega Semiconductor. It is designed for power management applications where low conduction losses are critical. The dual configuration allows for efficient space utilization in compact electronic designs.
No public confirmed substitute part numbers are available in the provided documentation.
The maximum gate-source voltage (VGS) rating is ±12V.
The typical input capacitance (Ciss) is 840 pF.
Yes, the AON3818 is RoHS and Halogen-Free compliant.