ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 4.3A/3.4A 8DFN
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：4.3A, 3.4A
- Rds On (Max) @ Id, Vgs：50mOhm @ 4.3A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：210pF @ 15V
- Power - Max：1.9W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SMD, Flat Leads
- Supplier Device Package：8-DFN (3x2)
- Grade：-
- Qualification：-
Download product information
Overview
The AON4605 is a complementary enhancement mode MOSFET array manufactured by Alpha & Omega Semiconductor. It integrates an N-channel and a P-channel device within a single DFN 3x2A package. The N-channel component supports a drain-source voltage of 30V with a continuous drain current of 4.3A at VGS=10V, while the P-channel counterpart handles -30V and -3.4A at VGS=-10V. On-resistance values are specified as less than 50mΩ for the N-channel and less than 110mΩ for the P-channel at VGS=10V/-10V. The device utilizes advanced trench technology to achieve low gate charge and high-speed switching capabilities suitable for power inverter applications.
Feature Summary
- Complementary N-Channel and P-Channel configuration forming a high-speed power inverter
- Advanced trench technology providing excellent on-resistance and low gate charge
- Compact surface-mount packaging designed for space-constrained consumer electronics
Applications
- High-speed power inverters
- Consumer electronic circuits
- Low voltage power management systems
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape specifications. Confirm that the component meets RoHS compliance standards required for your assembly process. Check for any recent product change notices regarding manufacturing site updates or material substitutions before finalizing procurement plans.
Selection Notes
Select this component when a matched pair of N- and P-channel MOSFETs is required for synchronous rectification or half-bridge driving applications. Ensure the operating junction temperature remains within the -55°C to 150°C range. Verify that the gate drive voltage aligns with the specified thresholds for optimal RDS(ON) performance and switching speed.
Part Context
This part belongs to Alpha & Omega Semiconductor's portfolio of complementary MOSFET arrays. It is designed specifically for the consumer market segment. The manufacturer reserves the right to improve product design, functions, and reliability without notice. It is not authorized for use in life support devices or systems.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Cross-referencing requires independent verification of pinout compatibility, electrical parameters, and thermal characteristics against the original datasheet.
FAQ
What is the maximum junction temperature for the AON4605?
The maximum junction temperature (TJ) for the AON4605 is 150°C.
What is the typical total gate charge (Qg) for the N-channel at 10V?
The typical total gate charge (Qg) for the N-channel at VGS=10V is 4.05 nC.
What is the body diode reverse recovery time (trr) for the N-channel?
The typical body diode reverse recovery time (trr) for the N-channel is 7.5 ns.
