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Product Detailed Parameters
- Description：MOSFET 2P-CH 30V 4A 8DFN
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：4A
- Rds On (Max) @ Id, Vgs：68mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：290pF @ 15V
- Power - Max：1.9W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SMD, Flat Leads
- Supplier Device Package：8-DFN (3x2)
- Grade：-
- Qualification：-
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Overview
The AON4807 is a dual P-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench MOSFET technology to achieve low on-resistance within a compact DFN 3x2A package. The device features a drain-source voltage of -30V and a continuous drain current of -4A at VGS=-10V. On-resistance is specified as less than 68mΩ at VGS=-10V and less than 105mΩ at VGS=-4.5V. Key dynamic parameters include a total gate charge of 10nC at VGS=-10V and an input capacitance of 290pF. The component operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- Dual configuration integrating two independent P-channel MOSFETs in a single surface-mount package.
- Advanced trench technology designed to minimize on-resistance for improved power efficiency.
- Logic-level gate drive capability supporting operation at VGS=-4.5V for direct microcontroller interfacing.
Applications
- Load switch implementations
- Battery protection circuits
Procurement Notes
Verify the specific revision status of the datasheet, as the provided documentation indicates Revision 1 from July 2012. Confirm that the component meets RoHS standards and Sony 259 specifications if required by the design. Ensure the ordering suffix matches the exact tape and reel or cut tape requirements for the manufacturing process.
Selection Notes
Select this component for applications requiring dual P-channel switching with low on-resistance in a small footprint. Consider the thermal resistance characteristics when designing heat dissipation, as the DFN 3x2A package has limited thermal capacity compared to larger packages. Verify that the gate drive voltage aligns with the specified thresholds for optimal RDS(ON) performance.
Part Context
The AON4807 belongs to the Alpha & Omega Semiconductor portfolio of power semiconductors. It is part of a series of dual MOSFET arrays designed for consumer electronics and portable devices where space constraints are critical. The manufacturer focuses on providing high-performance trench technology solutions for load management and power control applications.
Replacement Considerations
Check for electrically equivalent dual P-channel MOSFETs with similar voltage and current ratings. Verify pinout compatibility and package dimensions before substitution. Review datasheets for differences in gate charge and thermal resistance to ensure circuit stability.
FAQ
What is the maximum continuous drain current for the AON4807?
The maximum continuous drain current is -4A when measured at a gate-source voltage of -10V.
Does the AON4807 support logic-level driving?
Yes, the device specifies an on-resistance of less than 105mΩ at a gate-source voltage of -4.5V, allowing for logic-level operation.
What is the package type for the AON4807?
The component is housed in a DFN 3x2A surface-mount package.
