AON5802B_101

Description：MOSFET N-CH DUAL DFN
Series：-

SKU:95652a568ba2 Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH DUAL DFN
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
Technology：-
Configuration：-
FET Feature：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-
Mounting Type：Surface Mount
Package / Case：6-WFDFN Exposed Pad
Supplier Device Package：6-DFN-EP (2x5)
Grade：-
Qualification：-

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AON5802B_101

Overview

The AON5802B is a dual N-channel MOSFET in a DFN 2x5 package. It features a drain-source voltage of 30V and a continuous drain current of 7.2A at VGS=4.5V. The on-resistance is less than 19mΩ at VGS=4.5V, 20mΩ at VGS=4.0V, 23mΩ at VGS=3.1V, and 30mΩ at VGS=2.5V. Gate-source voltage is rated at ±12V maximum. Total gate charge is 24nC at VGS=10V and 10nC at VGS=4.5V. Input capacitance is 1150pF, output capacitance is 105pF, and reverse transfer capacitance is 52pF. Junction temperature range is -55°C to 150°C.

Feature Summary

Common-drain configuration suitable for uni-directional or bi-directional load switching applications
Advanced trench technology providing low gate charge and operation with gate voltages as low as 2.5V
Typical ESD protection meeting HBM Class 3A standards

Applications

Uni-directional load switching
Bi-directional load switching

Procurement Notes

Verify the component datasheet revision and date code against the manufacturer's official documentation before procurement. Confirm that the specific ordering suffix matches the required packaging format. Ensure the device meets the intended consumer market qualification requirements, as critical life support applications are not authorized by the manufacturer.

Selection Notes

Select this component when a dual N-channel MOSFET with common-drain topology is required for low-voltage load switching. The device supports logic-level gate drive down to 2.5V, making it compatible with various control interfaces. Verify thermal performance based on the specific PCB copper area and ambient conditions, as junction-to-ambient resistance varies significantly with board design.

Part Context

The AON5802B belongs to Alpha & Omega Semiconductor's portfolio of dual MOSFETs designed for compact power management solutions. Utilizing advanced trench technology, it offers optimized on-resistance and fast switching characteristics within a small DFN 2x5 footprint. This series targets applications requiring efficient space-saving power switching in consumer electronics.