AON5802BL

Overview

The AON5802BL is a dual N-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor Inc. It features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 7.2A at case temperature. The device utilizes a 6-DFN surface mount package with exposed pad, designed for high-density applications.

Feature Summary

• Dual N-channel configuration in a compact footprint
• Enhancement mode operation for efficient switching
• Exposed pad design for improved thermal dissipation

Applications

• Power management circuits
• Battery protection modules
• DC-DC converter input stages

Procurement Notes

Verify the specific suffix 'BL' against the manufacturer's official datasheet to confirm pinout compatibility and electrical tolerances. Ensure the component matches the required 6-DFN package dimensions and thermal characteristics for the target PCB layout before finalizing procurement orders.

Selection Notes

Select this component when a dual N-channel MOSFET solution is required within a 30V system limit. Consider the 7.2A current rating and 6-DFN package size relative to available board space and thermal management requirements compared to single-channel alternatives.

Part Context

This part belongs to Alpha & Omega Semiconductor’s discrete power device portfolio, which targets high-volume consumer and industrial electronics. The company specializes in integrating process technology with advanced packaging to address complex power requirements in modern electronic systems.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify functional equivalence with other dual N-channel 30V devices only if supported by official cross-reference data from the manufacturer.