AON5816

Overview

The AON5816 is a dual N-channel MOSFET in a common-drain configuration, rated for a drain-source voltage of 20V and a continuous drain current of 12A at 25°C. It features low on-resistance, specified as less than 6.5mΩ at VGS=4.5V and ID=12A. The device includes typical ESD protection meeting HBM Class 2 standards. Packaged in a DFN 2x5A form factor with a tape and reel quantity of 5000 units, it supports a maximum junction temperature of 150°C.

Feature Summary

• Common-drain configuration designed to simplify circuit design
• Integrated ESD protection to enhance battery safety and performance
• Low RDS(ON) optimized for efficient power switching

Applications

• Battery protection switches
• Mobile device battery charging circuits
• Mobile device battery discharging circuits

Procurement Notes

Verify the specific package type and ordering suffix against the manufacturer's official documentation before procurement. Confirm that the component meets RoHS and halogen-free compliance requirements for your assembly process. Ensure the supplier provides valid traceability data consistent with Alpha & Omega Semiconductor Inc. manufacturing standards.

Selection Notes

Select this component for applications requiring a dual N-channel MOSFET with integrated ESD protection in a compact footprint. Evaluate the thermal resistance characteristics relative to your board layout, as the junction-to-ambient rating depends on copper area and airflow conditions. Verify gate drive voltage compatibility with the specified RDS(ON) thresholds.

Part Context

This part belongs to the Alpha & Omega Semiconductor portfolio of power semiconductors. It utilizes trench MOSFET technology to achieve low on-resistance and fast switching speeds within a small surface-mount package suitable for portable electronics.

Replacement Considerations

No public substitute part numbers are documented in the provided source material.