AON5820

Overview

The AON5820 is a dual N-channel MOSFET with a common-drain configuration, designed for low-voltage applications. It features a drain-source voltage (VDS) of 20V and a continuous drain current (ID) of 10A at 25°C. The device utilizes advanced trench technology to achieve low on-resistance, specified as less than 9.5mΩ at VGS=4.5V and ID=10A. It operates with gate voltages as low as 2.5V while maintaining a maximum gate-source voltage rating of ±12V. The component is housed in a DFN 2x5 package and includes typical ESD protection rated at HBM Class 2.

Feature Summary

• Dual N-channel architecture with common-drain configuration suitable for uni-directional or bi-directional load switching
• Advanced trench technology providing excellent on-resistance and low gate charge characteristics
• Capable of operation with gate voltages as low as 2.5V while retaining a 12V maximum gate-source voltage rating
• Integrated electrostatic discharge (ESD) protection meeting HBM Class 2 standards

Applications

• Uni-directional load switching
• Bi-directional load switching
• Low-voltage power management circuits

Procurement Notes

Verify the specific revision status and manufacturing date code upon procurement. Confirm that the received components match the DFN 2x5 package outline and pinout configuration detailed in the official datasheet. Ensure compliance with RoHS directives and check for any applicable export control classifications such as EAR99 before finalizing acquisition.

Selection Notes

Select this component when a dual N-channel solution with a common-drain topology is required for load switching applications. Consider the 20V voltage rating and 10A current capacity relative to system requirements. Evaluate the thermal performance based on the junction-to-ambient resistance of 75°C/W for natural convection scenarios or utilize heatsinking to leverage the lower junction-to-case resistance of 5.5°C/W.

Part Context

The AON5820 belongs to Alpha & Omega Semiconductor's portfolio of power MOSFETs utilizing trench technology. This series focuses on optimizing on-resistance and switching speed for low-voltage environments. The dual configuration allows for space-efficient designs in applications requiring two independent channels within a single compact footprint.

Replacement Considerations

No public substitute part numbers are confirmed in the provided documentation.