AON5820_101

Overview

The AON5820 is a common-drain dual N-channel enhancement mode MOSFET utilizing advanced trench technology. It features a drain-source voltage (VDS) of 20V and a continuous drain current (ID) of 10A at VGS=4.5V. The maximum on-resistance (RDS(ON)) is less than 9.5mΩ at VGS=4.5V, 10mΩ at VGS=4.0V, and 13mΩ at VGS=2.5V with ID=8A. The device supports a pulsed drain current (IDM) of 85A and operates within a junction temperature range of -55°C to 150°C. Thermal resistance from junction-to-case (RθJC) is 5.5°C/W, while junction-to-ambient (RθJA) is 75°C/W in still air. Total gate charge (Qg) is typically 12.5nC at VGS=4.5V.

Feature Summary

• Common-drain configuration suitable for uni-directional or bi-directional load switching applications
• Advanced trench technology provides low gate charge and excellent on-resistance performance
• Operates effectively with gate voltages as low as 2.5V while maintaining a 12V maximum VGS rating
• Includes typical ESD protection rated at HBM Class 2

Applications

• Uni-directional load switching
• Bi-directional load switching
• Power management circuits requiring low gate drive voltage

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets RoHS compliance standards required for your assembly process. Cross-reference the datasheet revision date to ensure all electrical characteristics align with your design requirements before finalizing procurement orders.

Selection Notes

Select this component when a dual N-channel MOSFET with a 20V rating and common-drain topology is required. Ensure the application gate drive voltage exceeds 2.5V to utilize the specified low RDS(ON) values. Verify that the thermal design accommodates the 75°C/W junction-to-ambient resistance if heatsinking is not employed. Check that the 85A pulsed current capability meets transient load demands.

Part Context

The AON5820 belongs to Alpha & Omega Semiconductor's portfolio of trench MOSFETs designed for power switching applications. It shares the common-drain architecture found in similar low-voltage series devices, optimized for efficiency in portable and battery-powered systems. The dual-channel layout allows for compact implementation in space-constrained designs requiring synchronized switching functions.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Evaluate alternatives based on matching VDS, ID, RDS(ON), package type (DFN 2x5), and pinout compatibility. Verify that any replacement maintains the common-drain configuration and similar thermal characteristics.