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AON6362FD is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 30V 27A/60A 8DFN. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for AON6362FD
- Description：MOSFET N-CH 30V 27A/60A 8DFN
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：27A (Ta), 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：5.2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：820 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：6.2W (Ta), 31W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-DFN (5x6)
- Package / Case：8-PowerSMD, Flat Leads
Single FETs, MOSFETs datasheet and documents for AON6362FD
Single FETs, MOSFETs Overview
The AON6362FD is a dual N-channel MOSFET array manufactured by Alpha & Omega Semiconductor Inc. It features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 15A at 25°C. The device utilizes advanced trench technology to achieve a low on-resistance (Rds(on)) of 4.8mΩ at Vgs=10V and 7.5mΩ at Vgs=4.5V. Packaged in an 8-DFN surface-mount configuration, it supports logic-level gate drive with a threshold voltage (Vgs(th)) of 1.5V max at 250µA. The component operates within a junction temperature range of -55°C to 150°C.
Single FETs, MOSFETs Feature Summary
- Dual N-channel configuration for space-efficient circuit design
- Advanced trench technology for low conduction losses
- Logic-level gate drive capability for direct microcontroller interfacing
Single FETs, MOSFETs Applications
- Load switching applications
- DC-DC converter output stages
- Power management circuits in portable devices
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix FD against the manufacturer datasheet to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status and check for any product change notices or end-of-life announcements prior to finalizing procurement plans.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring dual N-channel isolation in a compact footprint. Ensure the gate drive voltage meets the 4.5V requirement for optimal Rds(on) performance. Verify thermal dissipation capabilities relative to the DFN package power handling limits under expected operating conditions.
Single FETs, MOSFETs Part Context
This part belongs to the AON63xx series of dual N-channel MOSFETs from Alpha & Omega Semiconductor. These devices are designed for high-efficiency power management in consumer electronics and computing applications, offering improved thermal performance compared to traditional SOT-23 packages.
Single FETs, MOSFETs Replacement Considerations
Check for electrically equivalent dual N-channel MOSFETs with compatible 30V ratings and similar pinout configurations. Verify that substitute parts meet the same Rds(on) and package dimensions requirements.
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