AON6452L

Description：MOSFET N-CH 100V 6.5A/26A 8DFN
Series：SDMOS™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)

SKU:48c3219445c4 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

AON6452L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 100V 6.5A/26A 8DFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AON6452L

Description：MOSFET N-CH 100V 6.5A/26A 8DFN
Series：SDMOS™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：6.5A (Ta), 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：7V, 10V
Rds On (Max) @ Id, Vgs：25mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：34 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：2200 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：2W (Ta), 35W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-DFN (5x6)
Package / Case：8-PowerSMD, Flat Leads

Single FETs, MOSFETs datasheet and documents for AON6452L

AON6452L

Single FETs, MOSFETs Overview

The AON6452L is a dual N-channel enhancement mode MOSFET manufactured by Alpha & Omega Semiconductor. It features a 100V drain-source voltage (Vdss) and a continuous drain current (Id) of 13A at 25°C ambient temperature. The device offers a maximum on-resistance (Rds(on)) of 75mΩ at Vgs=10V and 95mΩ at Vgs=4.5V. Key electrical parameters include a gate charge (Qg) of 18nC at 10V, an input capacitance (Ciss) of 1100pF at 25V, and a threshold voltage (Vgs(th)) of 2.5V max at 250µA. It operates within a junction temperature range of -55°C to 150°C and is housed in an 8-DFN(5x6) surface-mount package.

Single FETs, MOSFETs Feature Summary

Dual N-channel configuration for space-efficient circuit design
Logic-level gate drive capability for low-voltage control applications
Low on-resistance optimized for power efficiency
Enhanced thermal performance via compact DFN packaging

Single FETs, MOSFETs Applications

DC-DC converter synchronous rectification
Load switching circuits
Power management modules

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'L' against the manufacturer datasheet to confirm lead-free status and RoHS compliance. Confirm the package marking code matches the 8-DFN(5x6) footprint dimensions. Check for obsolescence notices as component availability may vary. Ensure storage conditions adhere to moisture sensitivity level requirements specified in the official documentation.

Single FETs, MOSFETs Selection Notes

Select this component when a dual N-channel topology is required in a compact form factor. The logic-level gate drive supports direct interfacing with standard microcontrollers or low-voltage drivers. Evaluate the thermal resistance characteristics of the 8-DFN package against the expected power dissipation in the target application environment.

Single FETs, MOSFETs Part Context

The AON6452L belongs to the AON645 series of dual N-channel MOSFETs from Alpha & Omega Semiconductor. This series utilizes advanced trench technology to achieve low on-resistance and fast switching speeds. The part is designed for high-density power applications where board space is limited, serving as a key component in modern portable electronics and industrial power systems.