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AON6596 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 30V 20A/35A 8DFN. Review the specifications below when checking this part for your BOM.
The AON6596 is a 30V N-Channel AlphaMOS trench power MOSFET in an 8-pin DFN 5x6 package. It features a maximum drain-source voltage of 30V and continuous drain current of 35A at TC=25°C. The device offers low on-resistance, rated below 7.5mΩ at VGS=10V and below 10.5mΩ at VGS=4.5V with ID=20A. Total gate charge is 20nC at VGS=10V and 9.5nC at VGS=4.5V. Thermal resistance junction-to-case is 3°C/W, while junction-to-ambient is 55°C/W.
Verify the specific ordering suffix against official Alpha & Omega Semiconductor documentation to confirm exact packaging configuration. Ensure that the component meets RoHS and halogen-free compliance requirements as stated in the datasheet. Confirm that the intended application does not involve life support systems, as such uses are explicitly unauthorized by the manufacturer.
Select this component for low-voltage, high-current synchronous rectification or load switch applications where low conduction loss is critical. The low gate charge supports higher frequency operation in compact designs. Evaluate thermal management based on the specified junction-to-ambient resistance values for the target PCB copper area.
This part belongs to the AlphaMOS family from Alpha & Omega Semiconductor Inc., designed for consumer and general-purpose electronics. The product line focuses on providing cost-effective power solutions with advanced trench technology for improved efficiency in portable and industrial power supplies.
No public confirmed substitute part numbers are documented in the provided source material.
The datasheet specifies an avalanche energy rating of 29mJ when using an inductance of L=0.1mH, IAS=24A, and starting TJ=25°C.
Yes, the body diode reverse recovery time (trr) is 8.7ns and the reverse recovery charge (Qrr) is 13.5nC, measured at IF=20A and dI/dt=500A/μs.
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