AON6816

$1.31

Description：MOSFET 2N-CH 30V 17A 8DFN
Series：-

SKU:1fb5af7232a2 Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 17A 8DFN
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual) Common Drain
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：17A
Rds On (Max) @ Id, Vgs：6.2mOhm @ 16A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1540pF @ 15V
Power - Max：2.8W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerSMD, Flat Leads
Supplier Device Package：8-DFN (5x6)
Grade：-
Qualification：-

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AON6816

Overview

The AON6816 is a dual N-channel AlphaMOS power MOSFET manufactured by Alpha & Omega Semiconductor Inc. It features a DFN5X6 EP2 package with a drain-source voltage (VDS) of 30V and a continuous drain current (ID) of 16A at VGS=10V. The device exhibits low on-resistance, specified as less than 6.2mΩ at VGS=10V and less than 9.6mΩ at VGS=4.5V. Key electrical parameters include a gate threshold voltage ranging from 1.2V to 2.2V, total gate charge of 33.4nC to 45nC at 10V, and input capacitance of 1540pF. Thermal characteristics define a junction-to-case resistance of 6°C/W and a junction-to-ambient resistance of 80°C/W.

Feature Summary

Dual N-channel configuration utilizing latest Trench Power AlphaMOS technology for optimized switching performance.
Very low RDS(on) maintained at both 10V and 4.5V gate-source voltages to minimize conduction losses.
Low gate charge characteristics designed to support efficient high-frequency switching applications.
Includes typical ESD protection rated at HBM Class 2.

Applications

DC/DC Converters

Procurement Notes

Verify component authenticity through authorized distribution channels or direct manufacturer engagement. Confirm the specific revision status and lot traceability against the datasheet Rev1.1 dated September 2023. Ensure compliance with RoHS and Halogen-Free requirements as stated in the product summary before integrating into final assemblies.

Selection Notes

Select this component for designs requiring a compact dual N-channel solution within a 30V system. The low on-resistance at 4.5V makes it suitable for logic-level driving scenarios. Evaluate thermal management strategies based on the provided junction-to-ambient and junction-to-case resistance values to ensure operation remains within the -55°C to 150°C temperature range.

Part Context

The AON6816 belongs to the AlphaMOS family of power semiconductors produced by Alpha & Omega Semiconductor Inc. This series focuses on trench MOSFET technology aimed at reducing power losses through minimized RDS(on) and capacitance values. The dual configuration allows for space-efficient implementation in circuits requiring two independent N-channel switches.