SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The AON6850 is a dual N-channel MOSFET fabricated with SDMOS trench technology, offering an on-resistance of less than 35mΩ at VGS=10V and 42mΩ at VGS=7V. It supports a continuous drain current of 28A at TC=25°C and features a 100V drain-source breakdown voltage. The device includes a 1mm² exposed pad for thermal management and has been tested for 100% UIS and Rg stability. Key dynamic parameters include a total gate charge of 29nC maximum and a reverse recovery time of 30ns maximum.
Verify the specific package marking and revision status against the latest Alpha & Omega Semiconductor datasheet before integration. Confirm that the DFN5X6 EP2 footprint matches your PCB layout requirements. Ensure compliance with RoHS3 standards if required by your manufacturing process. Review the absolute maximum ratings to prevent exceeding thermal limits during operation.
Select this component when a dual N-channel configuration is required in a compact DFN5X6 EP2 package. Consider the 35mΩ RDS(ON) at 10V drive for standard logic-level applications. Evaluate the 28A continuous current rating against your peak load requirements. Verify that the 100V breakdown voltage aligns with your system's supply voltage headroom.
The AON6850 belongs to the SDMOS family from Alpha & Omega Semiconductor, utilizing advanced trench technology. It is designed as a universal solution for various power switching needs. The dual configuration allows for efficient half-bridge or synchronous rectifier implementations within a small surface-mount footprint.
No public confirmed substitute part numbers are available in the provided documentation.