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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 9A 8DFN
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：9A
- Rds On (Max) @ Id, Vgs：11.3mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：33nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1950pF @ 20V
- Power - Max：1.6W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerSMD, Flat Leads
- Supplier Device Package：8-DFN (5x6)
- Grade：-
- Qualification：-
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Overview
The AON6884 is a dual N-channel MOSFET from Alpha & Omega Semiconductor Inc., housed in an 8-DFN-EP (5x6 mm) package. It features a drain-source voltage of 40V and a continuous drain current of 34A at TC=25°C. The on-resistance is less than 11.3mΩ at VGS=10V and 13.8mΩ at VGS=4.5V. Key electrical parameters include a gate threshold voltage of 2.7V max, total gate charge of 33nC at 10V, and input capacitance of 1950pF. The device supports a maximum junction temperature of 150°C and has been tested for 100% UIS and Rg.
Feature Summary
- Advanced trench technology provides low on-resistance and low gate charge for efficient power conversion.
- Dual configuration with common source connections allows for compact circuit designs.
- Validated for unclamped inductive switching (UIS) performance to ensure robustness in inductive loads.
Applications
- Power conversion applications requiring high efficiency and low conduction losses.
- Circuits utilizing synchronous rectification or half-bridge topologies.
- General-purpose switching applications compatible with logic-level gate drive voltages.
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging type and tape-and-reel specifications. Confirm RoHS compliance status and lead times directly with authorized distributors, as availability may vary by region and production lot.
Selection Notes
Select this component when a 40V rating and dual N-channel configuration are required. Ensure the PCB thermal design can handle the specified junction-to-ambient resistance if heatsinking is not utilized. Verify that the gate drive voltage meets the requirements for the desired on-resistance level.
Part Context
The AON6884 belongs to the AON68xx series of dual MOSFETs from Alpha & Omega Semiconductor. These devices utilize advanced trench technology to optimize the balance between on-resistance and gate charge, targeting general-purpose power management solutions.
Replacement Considerations
Potential substitutes include AO4884 and AO4882, which share similar 40V dual N-channel specifications. Verify pinout compatibility and thermal characteristics before substitution.
