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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 11A/12A 8DFN
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Asymmetrical
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：11A, 12A
- Rds On (Max) @ Id, Vgs：11mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1380pF @ 15V
- Power - Max：1.9W, 2.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：8-DFN (5x6)
- Grade：-
- Qualification：-
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Overview
The AON6926 is a 30V dual asymmetric N-channel MOSFET in a Power DFN5x6A package. It integrates a high-side Q1 optimized for switching and a low-side Q2 SRFET with an integrated Schottky diode. Q1 offers RDS(ON) <11mΩ at VGS=10V and <14mΩ at VGS=4.5V, with continuous current of 44A (TC=25°C). Q2 provides RDS(ON) <8.5mΩ at VGS=10V and <12mΩ at VGS=4.5V, with continuous current of 50A (TC=25°C). The device supports 100% UIS testing and operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- Asymmetric dual configuration with dedicated high-side and low-side optimization
- Integrated Schottky diode on the low-side channel for reduced reverse recovery losses
- Trench technology designed for high efficiency synchronous buck power stages
Applications
- Compact DC/DC converter applications
- Synchronous buck power stage designs
- Board space-optimized power management systems
Procurement Notes
Verify component authenticity through authorized Alpha & Omega Semiconductor distributors or direct manufacturer channels. Confirm datasheet revision status and lot traceability upon receipt. Ensure storage conditions comply with moisture sensitivity level requirements to prevent package damage before soldering.
Selection Notes
Select this component for applications requiring minimized board area through integrated dual-channel packaging. Evaluate thermal performance based on specific PCB copper layout and ambient air flow conditions. Verify gate drive voltage compatibility with the specified threshold and on-resistance characteristics for both high and low-side operations.
Part Context
This part belongs to the AON692 series of dual asymmetric N-channel MOSFETs from Alpha & Omega Semiconductor. It shares the same functional architecture as models like the AON6920, AON6922, and AON6924, differing primarily in specific current ratings and on-resistance values tailored for distinct power density requirements.
Replacement Considerations
Potential substitutes include other 30V dual asymmetric N-channel MOSFETs from the same family, such as the AON6920, AON6922, or AON6924. Verify pinout compatibility and thermal resistance parameters when considering alternatives from other manufacturers.
