AON6934A

Description：MOSFET 2N-CH 30V 22A/30A 8DFN
Series：-

SKU:b2cb45f76478 Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 22A/30A 8DFN
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual) Asymmetrical
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：22A, 30A
Rds On (Max) @ Id, Vgs：5.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1037pF @ 15V
Power - Max：3.6W, 4.3W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerVDFN
Supplier Device Package：8-DFN (5x6)
Grade：-
Qualification：-

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AON6934A

Overview

The AON6934A is a dual asymmetric N-channel AlphaMOS transistor in an 8-PowerVDFN package. It features two independent channels with distinct electrical characteristics. Q1 provides a maximum drain-source voltage of 30V, continuous drain current of 28A at TC=25°C, and on-resistance below 5.2mΩ at VGS=10V. Q2 offers higher current capability with 36A continuous drain current and on-resistance under 2.9mΩ at VGS=10V. Both channels operate within a junction temperature range of -55°C to 150°C.

Feature Summary

Dual asymmetric configuration with optimized performance for each channel
Advanced Trench Power AlphaMOS technology for low conduction losses
High current handling capability suitable for power delivery applications

Applications

DC/DC converters in computing systems
Point-of-load (POL) regulation in servers
Isolated DC/DC converters in telecom infrastructure
Industrial power supply modules

Procurement Notes

Verify the component against official Alpha & Omega Semiconductor datasheets to confirm pinout orientation and thermal pad connectivity. Ensure the selected package variant matches the required PCB footprint dimensions. Confirm RoHS compliance status through manufacturer documentation prior to integration into final assemblies.

Selection Notes

Select this component when asymmetric dual-channel performance is required within a compact surface-mount form factor. Evaluate thermal resistance values based on specific board copper area and airflow conditions. Compare gate charge requirements against driver capabilities to ensure efficient switching transitions.

Part Context

This device belongs to the AlphaMOS family utilizing trench MOSFET technology. It serves as a high-efficiency switching solution for modern power management architectures. The dual-channel design allows for space-constrained implementations requiring independent control or parallel operation.