AON6938

Overview

The AON6938 is a dual asymmetric N-channel AlphaMOS power transistor housed in a DFN5X6 package. It integrates two independent channels, Q1 and Q2, optimized for distinct current handling capabilities within a single component. The device utilizes trench technology to achieve low on-resistance at both 10V and 4.5V gate-source voltages. Key electrical specifications include a drain-source voltage rating of 30V. Channel Q1 supports a continuous drain current of up to 30A with an on-resistance below 8.2mΩ at VGS=10V. Channel Q2 provides higher current capacity, supporting up to 42A with an on-resistance below 2.2mΩ under the same conditions.

Feature Summary

• Dual asymmetric configuration integrating two N-channel MOSFETs with differentiated current ratings
• AlphaMOS LV trench technology enabling very low on-resistance at 4.5V gate drive
• Validated reliability through 100% unclamped inductive switching (UIS) testing
• RoHS compliant and halogen-free construction

Applications

• DC/DC converters in computing systems
• Point-of-load (POL) applications in servers
• Isolated DC/DC converters in telecommunications infrastructure
• Industrial power supply designs

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging format and tape-and-reel specifications. Confirm that the component meets the required environmental standards, such as RoHS compliance, for the intended manufacturing process. Cross-reference the datasheet revision date to ensure all thermal and electrical characteristics align with current design requirements before finalizing procurement orders.

Selection Notes

Select this component when space-constrained designs require two asymmetric switches with significantly different current carrying capacities. The low RDS(on) at 4.5V makes it suitable for logic-level control interfaces. Ensure the PCB layout accommodates the DFN5X6 package dimensions and provides adequate copper area for thermal dissipation, as the junction-to-ambient resistance is highly dependent on board design.

Part Context

This part belongs to the Alpha & Omega Semiconductor AlphaMOS family, which focuses on low-voltage power management solutions. The dual asymmetric architecture allows designers to replace separate discrete components, reducing bill of materials count and assembly complexity. It is specifically engineered for high-efficiency power conversion stages where size reduction and thermal performance are critical constraints.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.