AON6946

$0.20

Description：MOSFET 2N-CH 30V 14A/18A 8DFN
Series：-

SKU:321b285be40d Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 14A/18A 8DFN
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual) Asymmetrical
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：14A, 18A
Rds On (Max) @ Id, Vgs：11.6mOhm @ 13A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：485pF @ 15V
Power - Max：3.5W, 3.9W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerVDFN
Supplier Device Package：8-DFN (5x6)
Grade：-
Qualification：-

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AON6946

Overview

The AON6946 is a dual asymmetric N-channel AlphaMOS MOSFET array housed in an 8-DFN (5x6) package. It features two independent channels with distinct current ratings: Q1 supports 14A continuous drain current, while Q2 supports 18A. Both channels operate at a 30V drain-source voltage. At VGS=10V, the maximum on-resistance is 11.6mΩ for Q1 and 7.8mΩ for Q2. The device utilizes trench technology to achieve low gate charge and high current capability. It is rated for junction temperatures up to 150°C and includes 100% UIS testing.

Feature Summary

Dual asymmetric configuration with differentiated current handling capabilities between channels
Low on-resistance optimized for logic-level gate drive voltages
High current capability supported by robust thermal design
Compliant with RoHS and Halogen-Free standards

Applications

DC/DC converters in computing and server power supplies
Point-of-load (POL) regulation circuits
Isolated DC/DC converters in telecommunications infrastructure
Industrial power conversion systems

Procurement Notes

Verify component authenticity through authorized distribution channels or direct manufacturer engagement. Confirm the specific revision status of the datasheet, as specifications may be subject to change without notice. Ensure compliance with applicable export control regulations and legal requirements relevant to the jurisdiction of purchase. Evaluate product suitability for the intended application prior to integration.

Selection Notes

Select this component when asymmetric current sharing is required within a compact footprint. The distinct ratings allow Q2 to handle higher loads than Q1. Verify that the application's gate drive voltage aligns with the low RDS(on) characteristics at 4.5V or 10V. Consider the thermal resistance values provided for both junction-to-case and junction-to-ambient scenarios during PCB layout planning.

Part Context

This part belongs to the AON694 series from Alpha & Omega Semiconductor. It represents an evolution in trench power MOSFET technology designed for efficiency improvements in power management applications. The asymmetric nature distinguishes it from standard dual N-channel arrays where both transistors share identical electrical parameters.