AON6971

$1.22

Description：MOSFET 2N-CH 30V 23A/40A 8DFN
Series：SRFET™

SKU:d894b71dbafe Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 23A/40A 8DFN
Series：SRFET™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual) Asymmetrical
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：23A, 40A
Rds On (Max) @ Id, Vgs：5.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1010pF @ 15V
Power - Max：5W, 4.1W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerWDFN
Supplier Device Package：8-DFN (5x6)
Grade：-
Qualification：-

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AON6971

Overview

The AON6971 is a dual asymmetric N-Channel AlphaMOS MOSFET in an 8-DFN (5x6) package. It integrates Q1 and Q2 with distinct electrical profiles. Q1 features a Drain-Source Voltage (VDS) of 30V, continuous drain current (ID) of 56A at TC=25°C, and RDS(ON) <5.7mΩ @ VGS=10V. Q2 offers ID of 85A and RDS(ON) <1.7mΩ @ VGS=10V. Both channels support VGS(max) of ±20V. The device includes an integrated Schottky diode on Q2 (SRFET). Thermal resistance RθJC is 4°C/W for Q1 and 1.6°C/W for Q2. Operating junction temperature ranges from -55°C to 150°C.

Feature Summary

Asymmetric dual-channel configuration optimizing switching performance
Integrated SRFET soft recovery Schottky diode on the high-current channel
AlphaMOS LV trench technology for low gate charge and on-resistance

Applications

DC/DC converters in computing and server power supplies
Point-of-load (POL) regulation circuits
Isolated DC/DC converters in telecom and industrial systems

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm datasheet revision status matches design requirements. Ensure thermal management solutions align with specified RθJA and RθJC values for the target application environment.

Selection Notes

Select based on specific channel requirements due to asymmetric characteristics. Use Q1 for standard switching or Q2 for high-current paths. Evaluate total gate charge and threshold voltage compatibility with available driver logic levels for optimal efficiency.

Part Context

Part of the Alpha & Omega Semiconductor AON69xx series utilizing AlphaMOS technology. Designed for compact surface-mount applications requiring high current density and fast switching speeds within low-profile packages.

Replacement Considerations

Direct substitutes include AON6973A and AON6974A from the same manufacturer family. Verify pinout compatibility and specific RDS(ON) thresholds before implementation.