AON6973A

Description：MOSFET 2N-CH 30V 22A/30A 8DFN
Series：SRFET™

SKU:ef46c9d1acb4 Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 22A/30A 8DFN
Series：SRFET™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual) Asymmetrical
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：22A, 30A
Rds On (Max) @ Id, Vgs：5.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1037pF @ 15V
Power - Max：3.6W, 4.3W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerVDFN
Supplier Device Package：8-DFN (5x6)
Grade：-
Qualification：-

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AON6973A

Overview

The AON6973A is a dual asymmetric N-channel AlphaMOS MOSFET with a 30V drain-source voltage rating. It integrates an SRFET Schottky diode on the low-side channel (Q2). Q1 supports a continuous drain current of 28A at VGS=10V with RDS(ON) <5.2mΩ, while Q2 supports 32A with RDS(ON) <3.9mΩ. Both channels maintain low resistance at 4.5V drive. The device features 100% UIS and Rg testing, operates from -55°C to 150°C, and uses an 8-DFN (5x6mm) package.

Feature Summary

Dual asymmetric configuration with integrated Schottky diode on the low-side channel for improved switching performance.
Latest Trench Power AlphaMOS technology enabling very low on-resistance at both 4.5V and 10V gate drives.
Low gate charge characteristics combined with high current capability for efficient power management.
Robust reliability verified through 100% Unclamped Inductive Switching (UIS) and Gate Resistance (Rg) testing.

Applications

DC/DC converters in computing and server applications
Point-of-load (POL) regulation modules
Isolated DC/DC converters in telecom infrastructure
Industrial power supply systems

Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm RoHS and halogen-free compliance status prior to integration. Ensure thermal design accounts for junction-to-ambient resistance variations based on PCB copper area and airflow conditions specified in the application notes.

Selection Notes

Select this component for applications requiring asymmetric current handling where one channel drives higher loads than the other. The integrated body diode reduces external component count in synchronous rectification topologies. Verify that the 30V breakdown voltage aligns with system bus requirements and that the 8-DFN package fits the available footprint constraints.

Part Context

Manufactured by Alpha & Omega Semiconductor Inc., the AON6973A belongs to the AlphaMOS family utilizing advanced trench technology. It is designed as a complementary pair within a single package to optimize board space and thermal performance for modern compact power electronics designs.

Replacement Considerations

Direct substitutes include AON6970, AON6974, and AON6974A, which share similar 30V dual asymmetric specifications. Verify pinout compatibility and specific RDS(ON) tolerances before swapping to ensure circuit stability.

FAQ

What is the difference between Q1 and Q2 in the AON6973A?

Q1 and Q2 are asymmetric; Q1 has a lower continuous current rating (28A) and slightly higher on-resistance compared to Q2 (32A), which also features an integrated Schottky diode (SRFET).