AON6978

Overview

The AON6978 is a dual asymmetric N-Channel AlphaMOS power device featuring a 30V drain-source voltage rating. It integrates two distinct channels within an 8-DFN (5x6) package. The high-side Q1 channel provides a continuous drain current of 28A at VGS=10V with a maximum on-resistance of 5.7mΩ. The low-side Q2 channel, configured as a Soft Recovery FET (SRFET), delivers 36A at VGS=10V with a maximum on-resistance of 3.8mΩ. Both channels are tested for 100% UIS and gate resistance.

Feature Summary

• Asymmetric dual-channel architecture with integrated SRFET on the low-side
• Latest Trench Power AlphaMOS technology for optimized performance
• Very low RDS(on) capability at 4.5V gate drive
• Low gate charge characteristics for efficient switching

Applications

• DC/DC converters in computing and servers
• Point-of-load (POL) applications
• Isolated DC/DC converters in telecom systems
• Industrial power supply designs

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status and check for specific ordering suffixes that may indicate tape-and-reel packaging variations. Ensure the supplier provides valid traceability documentation to match the manufacturer's quality standards.

Selection Notes

Select this component for applications requiring asymmetric current handling where the low-side switch demands higher capacity than the high-side. Evaluate thermal management requirements based on the junction-to-case resistance values provided in the datasheet. Ensure the driving circuit supports the specified gate threshold voltages for reliable turn-on at both 4.5V and 10V logic levels.

Part Context

This part belongs to the AlphaMOS family from Alpha & Omega Semiconductor Inc., utilizing trench MOSFET technology. It is designed specifically for power management applications where size constraints and efficiency are critical. The dual configuration allows for simplified circuit layouts in half-bridge or synchronous buck topologies.

Replacement Considerations

Direct substitutes must match the 30V rating, DFN5X6B package, and asymmetric current specifications. Verify that any replacement maintains the SRFET body diode characteristics and similar gate charge profiles to ensure compatibility with existing driver circuits.

FAQ

What is the difference between Q1 and Q2 in the AON6978?

Q1 is the high-side channel rated for 28A continuous current, while Q2 is the low-side SRFET channel rated for 36A continuous current. They have different on-resistance values and are optimized for their respective positions in a switching topology.

Does the AON6978 include an integrated Schottky diode?

Yes, the low-side channel (Q2) features an integrated Schottky Diode, referred to as SRFET (Soft Recovery FET), which improves reverse recovery performance compared to standard body diodes.

What is the maximum avalanche energy rating for this device?

The datasheet specifies an avalanche energy (EAS) rating of 131mJ for Q1 and 144mJ for Q2, measured under conditions of L=0.01mH and starting TJ=25°C.