AON6992

$1.16

Description：MOSFET 2N-CH 30V 19A/31A 8DFN
Series：-

SKU:a9906dad6954 Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 19A/31A 8DFN
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual) Asymmetrical
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：19A, 31A
Rds On (Max) @ Id, Vgs：5.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：820pF @ 15V
Power - Max：3.1W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerWDFN
Supplier Device Package：8-DFN (5x6)
Grade：-
Qualification：-

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AON6992

Overview

The AON6992 is a dual asymmetric N-channel MOSFET array utilizing Trench Power αMOS technology. It integrates Q1 and Q2 in an 8-DFN (5x6) package. Q1 features a drain-source voltage of 30V, continuous drain current of 50A at 25°C case temperature, and on-resistance below 5.2mΩ at VGS=10V. Q2 functions as a Soft Recovery FET with 30V rating, 85A continuous current capability, and on-resistance under 2mΩ at VGS=10V. The device includes an integrated Schottky diode for Q2. Thermal resistance from junction to case is 6°C/W for Q1 and 2.8°C/W for Q2.

Feature Summary

Dual asymmetric configuration integrating a standard N-channel MOSFET and a Soft Recovery FET within a single package.
Trench Power αMOS technology providing low on-resistance and high current capability.
Integrated Schottky diode associated with the Soft Recovery FET to manage reverse recovery characteristics.

Applications

DC/DC converters in computing systems
Isolated DC/DC converters in telecom infrastructure
Isolated DC/DC converters in industrial applications

Procurement Notes

Verify component authenticity through authorized distribution channels or direct manufacturer engagement. Confirm RoHS compliance status and check for specific ordering suffixes that may indicate packaging variations. Review datasheet revision history for updates regarding electrical parameters or thermal ratings before finalizing procurement specifications.

Selection Notes

Evaluate thermal management requirements based on the distinct junction-to-case resistances of the asymmetric pair. Ensure gate drive voltages align with the specified thresholds for optimal RDS(ON) performance. Consider the soft recovery characteristics of Q2 when designing circuits requiring controlled body-diode reverse recovery behavior.

Part Context

This component belongs to the AON699 family of dual MOSFET arrays. It is designed specifically for power conversion topologies requiring mixed switching speeds or soft recovery properties. The integration allows for reduced footprint compared to discrete solutions while maintaining high efficiency in synchronous rectification or half-bridge configurations.

Replacement Considerations

Publicly confirmed substitute part numbers include AONY36302 from Alpha & Omega Semiconductor Inc.

FAQ

What distinguishes Q2 from Q1 in the AON6992?

Q2 is a Soft Recovery FET (SRFET) with lower on-resistance and higher current capability than Q1. It also features an integrated Schottky diode, whereas Q1 does not.