AON6994

AON6994

$1.36
  • Description:MOSFET 2N-CH 30V 19A/26A 8DFN
  • Series:-

SKU:d26a4ff9a91e Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 30V 19A/26A 8DFN
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual) Asymmetrical
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:19A, 26A
  • Rds On (Max) @ Id, Vgs:5.2mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:13nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:820pF @ 15V
  • Power - Max:3.1W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerWDFN
  • Supplier Device Package:8-DFN (5x6)
  • Grade:-
  • Qualification:-

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AON6994

Overview

The AON6994 is a 30V Dual Asymmetric N-Channel MOSFET manufactured by Alpha & Omega Semiconductor. It utilizes Trench Power αMOS technology and features an integrated Schottky diode on the Q2 channel (SRFET). The device is housed in a DFN 5x6 package. Electrical specifications include a drain-source breakdown voltage of 30V, a maximum gate-source voltage of ±20V, and a junction temperature range of -55°C to 150°C. Static parameters for Q1 show a continuous drain current of 50A and an on-resistance below 5.2mΩ at VGS=10V. Q2 provides higher performance with a continuous drain current of 82A and an on-resistance below 2.8mΩ at VGS=10V.

Feature Summary

  • Dual asymmetric configuration integrating a standard N-channel MOSFET with an SRFET featuring an integrated Schottky diode.
  • Manufactured using Trench Power αMOS technology to achieve low on-resistance and high current capability.
  • Subjected to 100% testing for Unclamped Inductive Switching (UIS) and gate resistance.

Applications

  • DC/DC Converters in Computing
  • Isolated DC/DC Converters in Telecom and Industrial

Procurement Notes

Verify component authenticity through authorized distribution channels or direct manufacturer engagement. Confirm that the specific orderable part number matches the required package type and form factor. Ensure compliance with RoHS and Halogen-Free standards as documented in the official datasheet. Validate that the procurement source provides accurate traceability documentation for quality assurance purposes.

Selection Notes

Select this component based on the requirement for a dual asymmetric topology within a compact DFN 5x6 footprint. Evaluate thermal management requirements against the specified junction-to-case and junction-to-ambient thermal resistances. Consider the distinct electrical characteristics between Q1 and Q2 when designing the circuit topology. Verify that the operating conditions remain within the absolute maximum ratings defined in the datasheet.

Part Context

The AON6994 belongs to the AON699 series of dual asymmetric N-Channel MOSFETs produced by Alpha & Omega Semiconductor. This series is designed for power management applications requiring integrated rectification capabilities. The product is qualified for the consumer market and is available in tape and reel packaging.

Replacement Considerations

Publicly confirmed substitute part numbers are not identified in the provided documentation. Designers should consult the manufacturer's official resources for potential cross-references or updated alternatives.

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