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The AON6994 is a 30V Dual Asymmetric N-Channel MOSFET manufactured by Alpha & Omega Semiconductor. It utilizes Trench Power αMOS technology and features an integrated Schottky diode on the Q2 channel (SRFET). The device is housed in a DFN 5x6 package. Electrical specifications include a drain-source breakdown voltage of 30V, a maximum gate-source voltage of ±20V, and a junction temperature range of -55°C to 150°C. Static parameters for Q1 show a continuous drain current of 50A and an on-resistance below 5.2mΩ at VGS=10V. Q2 provides higher performance with a continuous drain current of 82A and an on-resistance below 2.8mΩ at VGS=10V.
Verify component authenticity through authorized distribution channels or direct manufacturer engagement. Confirm that the specific orderable part number matches the required package type and form factor. Ensure compliance with RoHS and Halogen-Free standards as documented in the official datasheet. Validate that the procurement source provides accurate traceability documentation for quality assurance purposes.
Select this component based on the requirement for a dual asymmetric topology within a compact DFN 5x6 footprint. Evaluate thermal management requirements against the specified junction-to-case and junction-to-ambient thermal resistances. Consider the distinct electrical characteristics between Q1 and Q2 when designing the circuit topology. Verify that the operating conditions remain within the absolute maximum ratings defined in the datasheet.
The AON6994 belongs to the AON699 series of dual asymmetric N-Channel MOSFETs produced by Alpha & Omega Semiconductor. This series is designed for power management applications requiring integrated rectification capabilities. The product is qualified for the consumer market and is available in tape and reel packaging.
Publicly confirmed substitute part numbers are not identified in the provided documentation. Designers should consult the manufacturer's official resources for potential cross-references or updated alternatives.